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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK5Q65W,S1QMOSFET N-CH 650V 5.2A IPAK Toshiba Semiconductor and Storage |
4,074 | 0.20 |
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DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.2A (Ta) | 10V | 1.22Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK9A45D(STA4,Q,M)MOSFET N-CH 450V 9A TO220SIS Toshiba Semiconductor and Storage |
3,036 | 0.30 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 9A (Ta) | 10V | 770mOhm @ 4.5A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A53D(STA4,Q,M)MOSFET N-CH 525V 5A TO220SIS Toshiba Semiconductor and Storage |
2,104 | 0.24 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 525 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK6A50D(STA4,Q,M)MOSFET N-CH 500V 6A TO220SIS Toshiba Semiconductor and Storage |
2,525 | 0.24 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Ta) | 10V | 1.4Ohm @ 3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK6Q65W,S1QMOSFET N-CH 650V 5.8A IPAK Toshiba Semiconductor and Storage |
1,646 | 0.23 |
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Datasheet |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK3R1E04PL,S1XMOSFET N-CH 40V 100A TO220 Toshiba Semiconductor and Storage |
2,290 | 0.23 |
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Datasheet |
U-MOSIX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4 nC @ 10 V | ±20V | 4670 pF @ 20 V | - | 87W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
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TK8A65W,S5XMOSFET N-CH 650V 7.8A TO220SIS Toshiba Semiconductor and Storage |
1,315 | 0.32 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.8A (Ta) | 10V | 650mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK560A60Y,S4XMOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage |
4,415 | 0.27 |
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Datasheet |
DTMOSV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A60D(STA4,Q,M)MOSFET N-CH 600V 5A TO220SIS Toshiba Semiconductor and Storage |
2,158 | 0.28 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK8A45D(STA4,Q,M)MOSFET N-CH 450V 8A TO220SIS Toshiba Semiconductor and Storage |
2,763 | 0.28 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 8A (Ta) | 10V | 900mOhm @ 4A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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