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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK380A65Y,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,831 | 0.38 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK6A80E,S4XMOSFET N-CH 800V 6A TO220SIS Toshiba Semiconductor and Storage |
4,604 | 0.40 |
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Datasheet |
π-MOSVIII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Ta) | 10V | 1.7Ohm @ 3A, 10V | 4V @ 600µA | 32 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK17A65W,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
3,854 | 0.62 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK12A80W,S4XMOSFET N-CH 800V 11.5A TO220SIS Toshiba Semiconductor and Storage |
2,796 | 0.65 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23 nC @ 10 V | ±20V | 1400 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK17A65W5,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
3,926 | 0.66 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 230mOhm @ 8.7A, 10V | 4.5V @ 900µA | 50 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK155A65Z,S4XMOSFET N-CH 650V 18A TO220SIS Toshiba Semiconductor and Storage |
2,082 | 0.66 |
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Datasheet |
DTMOSVI | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 40W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK20N60W5,S1VFMOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage |
1,187 | 0.75 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK16N60W,S1VFMOSFET N CH 600V 15.8A TO247 Toshiba Semiconductor and Storage |
1,682 | 0.80 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK110A65Z,S4XMOSFET N-CH 650V 24A TO220SIS Toshiba Semiconductor and Storage |
1,626 | 0.89 |
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Datasheet |
DTMOSVI | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK14N65W5,S1FMOSFET N-CH 650V 13.7A TO247 Toshiba Semiconductor and Storage |
4,021 | 0.82 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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