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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK25N60X,S1FMOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage |
1,777 | 0.89 |
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Datasheet |
DTMOSIV-H | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK090A65Z,S4XMOSFET N-CH 650V 30A TO220SIS Toshiba Semiconductor and Storage |
3,342 | 1.00 |
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Datasheet |
DTMOSVI | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK28A65W,S5XMOSFET N-CH 650V 27.6A TO220SIS Toshiba Semiconductor and Storage |
100 | 1.05 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK16J60W,S1VEX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
1,390 | 0.96 |
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Datasheet |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C | - | - | Through Hole | TO-3P(N) |
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TK39J60W,S1VQMOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage |
3,078 | 2.04 |
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Datasheet |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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TK040Z65Z,S1FMOSFET N-CH 650V 57A TO247-4L Toshiba Semiconductor and Storage |
4,308 | 2.37 |
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Datasheet |
DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
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SSM5H90ATU,LFMOSFET N-CH 20V 2.4A UFV Toshiba Semiconductor and Storage |
635 | 0.02 |
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Datasheet |
- | 5-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.5V, 4V | 65mOhm @ 1.5A, 4V | 1.2V @ 1mA | 2.2 nC @ 4 V | ±10V | 200 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UFV |
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SSM6K781G,LFMOSFET N-CH 12V 7A 6WCSP6C Toshiba Semiconductor and Storage |
569 | 0.04 |
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Datasheet |
U-MOSVII-H | 6-UFBGA, WLCSP | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 7A (Ta) | 1.5V, 4.5V | 18mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4 nC @ 4.5 V | ±8V | 600 pF @ 6 V | - | 1.6W (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-WCSPC (1.5x1.0) |
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TK4A50D(STA4,Q,M)MOSFET N-CH 500V 4A TO220SIS Toshiba Semiconductor and Storage |
4,993 | 0.16 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPH3R003PL,LQMOSFET N-CH 30V 88A 8SOP Toshiba Semiconductor and Storage |
1,844 | 0.19 |
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Datasheet |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 88A (Tc) | 4.5V, 10V | 4.2mOhm @ 44A, 4.5V | 2.1V @ 300µA | 50 nC @ 10 V | ±20V | 3825 pF @ 15 V | - | 90W (Tc) | 175°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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