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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPN2R903PL,L1QMOSFET N-CH 30V 70A 8TSON Toshiba Semiconductor and Storage |
36,136 | 0.62 |
|
Datasheet |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 35A, 10V | 2.1V @ 200µA | 26 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 630mW (Ta), 75W (Tc) | 175°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
|
TPH8R903NL,LQMOSFET N CH 30V 20A 8SOP Toshiba Semiconductor and Storage |
3,150 | 0.64 |
|
Datasheet |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 1mA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1.6W (Ta), 24W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
SSM10N954L,EFFCOMMON-DRAIN NCH MOSFET, 12V, 13 Toshiba Semiconductor and Storage |
9,865 | 1.13 |
|
Datasheet |
- | 10-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 13.5A (Ta) | 2.5V, 4.5V | 2.75mOhm @ 6A, 4.5V | 1.4V @ 1.11mA | 25 nC @ 4 V | ±8V | - | - | 800mW (Ta) | 150°C | - | - | Surface Mount | TCSPAC-153001 |
|
2SJ168TE85LFMOSFET P-CH 60V 200MA SC59 Toshiba Semiconductor and Storage |
12,605 | 0.75 |
|
Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 2Ohm @ 50mA, 10V | - | - | ±20V | 85 pF @ 10 V | - | 200mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SC-59 |
|
TPN11006NL,LQMOSFET N-CH 60V 17A 8TSON Toshiba Semiconductor and Storage |
13,285 | 0.71 |
|
Datasheet |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
|
|
TPN22006NH,LQMOSFET N-CH 60V 9A 8TSON Toshiba Semiconductor and Storage |
5,752 | 0.73 |
|
Datasheet |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 6.5V, 10V | 22mOhm @ 4.5A, 10V | 4V @ 100µA | 12 nC @ 10 V | ±20V | 710 pF @ 30 V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
|
TJ10S04M3L,LXHQMOSFET P-CH 40V 10A DPAK Toshiba Semiconductor and Storage |
3,780 | 0.80 |
|
Datasheet |
U-MOSVI | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
|
|
TK15S04N1L,LXHQMOSFET N-CH 40V 15A DPAK Toshiba Semiconductor and Storage |
1,922 | 0.81 |
|
Datasheet |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
|
|
TPN7R006PL,L1QMOSFET N-CH 60V 54A 8TSON Toshiba Semiconductor and Storage |
9,946 | 0.78 |
|
Datasheet |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 54A (Tc) | 4.5V, 10V | 7mOhm @ 27A, 10V | 2.5V @ 200µA | 20 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 630mW (Ta), 75W (Tc) | 175°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
|
|
TPN3300ANH,LQMOSFET N-CH 100V 9.4A 8TSON Toshiba Semiconductor and Storage |
7,306 | 0.78 |
|
Datasheet |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Tc) | 10V | 33mOhm @ 4.7A, 10V | 4V @ 100µA | 11 nC @ 10 V | ±20V | 880 pF @ 50 V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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