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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK8A25DA,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
1,799 | 0.16 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.5A (Ta) | 10V | 500mOhm @ 3.8A, 10V | 3.5V @ 1mA | 16 nC @ 10 V | ±20V | 550 pF @ 100 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK46A08N1,S4XMOSFET N-CH 80V 46A TO220SIS Toshiba Semiconductor and Storage |
4,025 | 0.19 |
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Datasheet |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 46A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A45DA(STA4,Q,M)MOSFET N-CH 450V 4.5A TO220SIS Toshiba Semiconductor and Storage |
1,359 | 0.19 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4.5A (Ta) | 10V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A80E,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
4,433 | 0.26 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Ta) | 10V | 2.4Ohm @ 2.5A, 10V | 4V @ 500µA | 20 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 40W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK2A65D(STA4,Q,M)MOSFET N-CH 650V 2A TO220SIS Toshiba Semiconductor and Storage |
2,221 | 0.26 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Ta) | 10V | 3.26Ohm @ 1A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK35E08N1,S1XMOSFET N-CH 80V 55A TO220 Toshiba Semiconductor and Storage |
2,608 | 0.19 |
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Datasheet |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 55A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25 nC @ 10 V | ±20V | 1700 pF @ 40 V | - | 72W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK3A60DA(STA4,Q,M)MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage |
1,072 | 0.22 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK4A80E,S4XPB-FPOWERMOSFETTRANSISTORTO-220S Toshiba Semiconductor and Storage |
2,929 | 0.22 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Ta) | 10V | 3.5Ohm @ 2A, 10V | 4V @ 400µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK46E08N1,S1XMOSFET N-CH 80V 80A TO220 Toshiba Semiconductor and Storage |
2,631 | 0.20 |
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Datasheet |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 103W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK5A50D(STA4,Q,M)MOSFET N-CH 500V 5A TO220SIS Toshiba Semiconductor and Storage |
3,455 | 0.22 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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