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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK10Q60W,S1VQMOSFET N-CH 600V 9.7A IPAK Toshiba Semiconductor and Storage |
3,388 | 0.49 |
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Datasheet |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK13A45D(STA4,Q,M)MOSFET N-CH 450V 13A TO220SIS Toshiba Semiconductor and Storage |
4,833 | 0.44 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 13A (Ta) | 10V | 460mOhm @ 6.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK8Q60W,S1VQMOSFET N-CH 600V 8A IPAK Toshiba Semiconductor and Storage |
3,135 | 0.40 |
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Datasheet |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK8A60W,S4VXMOSFET N-CH 600V 8A TO220SIS Toshiba Semiconductor and Storage |
2,994 | 0.47 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK16E60W,S1VXMOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage |
4,130 | 0.46 |
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Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK12E60W,S1VXMOSFET N CH 600V 11.5A TO-220 Toshiba Semiconductor and Storage |
1,728 | 0.54 |
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Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 110W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK12A60D(STA4,Q,M)MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage |
2,811 | 0.54 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 550mOhm @ 6A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK10E80W,S1XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
1,230 | 0.58 |
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Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19 nC @ 10 V | ±20V | 1150 pF @ 300 V | - | 130W (Tc) | 150°C | - | - | Through Hole | TO-220 |
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TK10A60W,S4VXMOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage |
4,479 | 0.50 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK10A80W,S4XMOSFET N-CH 800V 9.5A TO220SIS Toshiba Semiconductor and Storage |
4,780 | 0.50 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19 nC @ 10 V | ±20V | 1150 pF @ 300 V | - | 40W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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