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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK25N60X5,S1FMOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage |
2,676 | 0.74 |
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Datasheet |
DTMOSIV-H | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK20E60W,S1VXMOSFET N-CH 600V 20A TO220 Toshiba Semiconductor and Storage |
1,069 | 0.87 |
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Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK110N65Z,S1FPOWER MOSFET TRANSISTOR TO-247(O Toshiba Semiconductor and Storage |
3,796 | 0.95 |
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Datasheet |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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TK28N65W,S1FMOSFET N-CH 650V 27.6A TO247 Toshiba Semiconductor and Storage |
4,695 | 1.01 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK20N60W,S1VFMOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage |
4,533 | 1.04 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK31E60W,S1VXMOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage |
4,189 | 1.35 |
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Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK35N65W5,S1FMOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage |
2,525 | 1.49 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TW107Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 10 Toshiba Semiconductor and Storage |
3,882 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 20A (Tc) | 18V | 152mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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TK31J60W5,S1VQMOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage |
2,808 | 1.58 |
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Datasheet |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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TK62N60W5,S1VFPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
1,465 | 2.12 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 45mOhm @ 30.9A, 10V | 4.5V @ 3.1mA | 205 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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