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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK110E10PL,S1XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
5,429 | 0.26 |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 10.7mOhm @ 21A, 10V | 2.5V @ 300µA | 33 nC @ 10 V | ±20V | 2040 pF @ 50 V | - | 87W (Tc) | 175°C | - | - | Through Hole | TO-220 |
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TK22A10N1,S4XMOSFET N-CH 100V 22A TO220SIS Toshiba Semiconductor and Storage |
4,280 | 0.30 |
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Datasheet |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK42A12N1,S4XMOSFET N-CH 120V 42A TO220SIS Toshiba Semiconductor and Storage |
9,325 | 0.31 |
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Datasheet |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 42A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52 nC @ 10 V | ±20V | 3100 pF @ 60 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK11A65W,S5XMOSFET N-CH 650V 11.1A TO220SIS Toshiba Semiconductor and Storage |
4,937 | 0.32 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.1A (Ta) | 10V | 390mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK32E12N1,S1XMOSFET N CH 120V 60A TO-220 Toshiba Semiconductor and Storage |
5,659 | 0.29 |
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Datasheet |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 60A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34 nC @ 10 V | ±20V | 2000 pF @ 60 V | - | 98W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK5R3E08QM,S1XUMOS10 TO-220AB 80V 5.3MOHM Toshiba Semiconductor and Storage |
4,888 | 0.33 |
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Datasheet |
U-MOSX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 5.3mOhm @ 50A, 10V | 3.5V @ 700µA | 55 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 150W (Tc) | 175°C | - | - | Through Hole | TO-220 |
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TK3R3A06PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
6,374 | 0.38 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 3.3mOhm @ 40A, 10V | 2.5V @ 700µA | 71 nC @ 10 V | ±20V | 5000 pF @ 30 V | - | 42W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TK6A65D(STA4,Q,M)MOSFET N-CH 650V 6A TO220SIS Toshiba Semiconductor and Storage |
4,228 | 0.41 |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Ta) | 10V | 1.11Ohm @ 3A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK290A65Y,S4XMOSFET N-CH 650V 11.5A TO220SIS Toshiba Semiconductor and Storage |
3,566 | 0.41 |
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Datasheet |
DTMOSV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK9A90E,S4XMOSFET N-CH 900V 9A TO220SIS Toshiba Semiconductor and Storage |
4,341 | 0.46 |
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Datasheet |
π-MOSVIII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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