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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK62N60W,S1VFMOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage |
8,182 | 3.12 |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 40mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK100L60W,VQMOSFET N-CH 600V 100A TO3P Toshiba Semiconductor and Storage |
4,395 | 6.62 |
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Datasheet |
DTMOSIV | TO-3PL | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 100A (Tc) | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360 nC @ 10 V | ±30V | 15000 pF @ 30 V | - | 797W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(L) |
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SSM6J213FE(TE85L,FMOSFET P CH 20V 2.6A ES6 Toshiba Semiconductor and Storage |
8,793 | 0.10 |
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Datasheet |
U-MOSVI | SOT-563, SOT-666 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | ES6 |
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SSM5H08TU,LFMOSFET N-CH 20V 1.5A UFV Toshiba Semiconductor and Storage |
2,128 | 0.10 |
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Datasheet |
U-MOSIII | 6-SMD (5 Leads), Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4V | 160mOhm @ 750mA, 4V | 1.1V @ 100µA | - | ±12V | 125 pF @ 10 V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C | - | - | Surface Mount | UFV |
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TK2K2A60F,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
5,328 | 0.20 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4V @ 350µA | 13 nC @ 10 V | ±30V | 450 pF @ 300 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK1K9A60F,S4XMOSFET N-CH 600V 3.7A TO220SIS Toshiba Semiconductor and Storage |
4,302 | 0.19 |
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Datasheet |
U-MOSIX | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Ta) | 10V | 1.9Ohm @ 1.9A, 10V | 4V @ 400µA | 14 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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SSM6J212FE,LFMOSFET P-CH 20V 4A ES6 Toshiba Semiconductor and Storage |
7,347 | 0.10 |
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Datasheet |
U-MOSVI | SOT-563, SOT-666 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 40.7mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1 nC @ 4.5 V | ±8V | 970 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | ES6 |
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SSM3J140TU,LXHFSMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage |
5,613 | 0.12 |
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Datasheet |
U-MOSVI | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.5V, 4.5V | 25.8mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | +6V, -8V | 1800 pF @ 10 V | - | 500mW (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | UFM |
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TK58E06N1,S1XMOSFET N-CH 60V 58A TO220 Toshiba Semiconductor and Storage |
8,657 | 0.28 |
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Datasheet |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Ta) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 110W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK34A10N1,S4XMOSFET N-CH 100V 34A TO220SIS Toshiba Semiconductor and Storage |
6,833 | 0.32 |
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Datasheet |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38 nC @ 10 V | ±20V | 2600 pF @ 50 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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