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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK16A45D(STA4,Q,M)MOSFET N-CH 450V 16A TO220SIS Toshiba Semiconductor and Storage |
6,048 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 450 V | 16A | - | 270mOhm @ 8A, 10V | - | - | - | - | - | - | - | - | - | Through Hole | TO-220SIS |
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TK16A55D(STA4,Q,M)MOSFET N-CH 550V 16A TO220SIS Toshiba Semiconductor and Storage |
4,421 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 16A (Ta) | - | 330mOhm @ 8A, 10V | 4V @ 1mA | 45 nC @ 10 V | - | 2600 pF @ 25 V | - | - | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK18E10K3,S1X(SMOSFET N-CH 100V 18A TO220-3 Toshiba Semiconductor and Storage |
9,959 | - |
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Datasheet |
U-MOSIV | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Ta) | - | 42mOhm @ 9A, 10V | - | 33 nC @ 10 V | - | - | - | - | 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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TK20P04M1,RQ(SMOSFET N-CH 40V 20A DPAK Toshiba Semiconductor and Storage |
2,536 | - |
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Datasheet |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 4.5V, 10V | 29mOhm @ 10A, 10V | 2.3V @ 100µA | 15 nC @ 10 V | ±20V | 985 pF @ 10 V | - | 27W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK20S04K3L(T6L1,NQMOSFET N-CH 40V 20A DPAK Toshiba Semiconductor and Storage |
4,802 | - |
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Datasheet |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 6V, 10V | 14mOhm @ 10A, 10V | 3V @ 1mA | 18 nC @ 10 V | ±20V | 820 pF @ 10 V | - | 38W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK20S06K3L(T6L1,NQMOSFET N-CH 60V 20A DPAK Toshiba Semiconductor and Storage |
6,402 | - |
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Datasheet |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 6V, 10V | 29mOhm @ 10A, 10V | 3V @ 1mA | 18 nC @ 10 V | ±20V | 780 pF @ 10 V | - | 38W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK25E06K3,S1X(SMOSFET N-CH 60V 25A TO220-3 Toshiba Semiconductor and Storage |
7,605 | - |
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Datasheet |
U-MOSIV | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Ta) | - | 18mOhm @ 12.5A, 10V | - | 29 nC @ 10 V | - | - | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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TK2P60D(TE16L1,NQ)MOSFET N-CH 600V 2A PW-MOLD Toshiba Semiconductor and Storage |
8,820 | - |
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Datasheet |
π-MOSVII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | PW-MOLD |
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TK30S06K3L(T6L1,NQMOSFET N-CH 60V 30A DPAK Toshiba Semiconductor and Storage |
3,283 | - |
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Datasheet |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 6V, 10V | 18Ohm @ 15A, 10V | 3V @ 1mA | 28 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 58W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK+ |
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TK40E10K3,S1X(SMOSFET N-CH 100V 40A TO220-3 Toshiba Semiconductor and Storage |
3,959 | - |
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Datasheet |
U-MOSIV | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Ta) | - | 15mOhm @ 20A, 10V | 4V @ 1mA | 84 nC @ 10 V | - | 4000 pF @ 10 V | - | - | - | - | - | Through Hole | TO-220-3 |
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