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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK4A60D(STA4,Q,M)MOSFET N-CH 600V 4A TO220SIS Toshiba Semiconductor and Storage |
5,662 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPCC8003-H(TE12LQMMOSFET N-CH 30V 13A 8TSON Toshiba Semiconductor and Storage |
9,245 | - |
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Datasheet |
U-MOSVI-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 16.9mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1300 pF @ 10 V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TPCC8008(TE12L,QM)MOSFET N-CH 30V 25A 8TSON Toshiba Semiconductor and Storage |
3,239 | - |
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Datasheet |
U-MOSIV | 8-VDFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta) | 4.5V, 10V | 6.8mOhm @ 12.5A, 10V | 2.5V @ 1A | 30 nC @ 10 V | ±25V | 1600 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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SSM3J108TU(TE85L)MOSFET P-CH 20V 1.8A UFM Toshiba Semiconductor and Storage |
4,079 | - |
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Datasheet |
U-MOSIII | 3-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.8V, 4V | 158mOhm @ 800mA, 4V | 1V @ 1mA | - | ±8V | 250 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UFM |
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TK40P03M1(T6RSS-Q)MOSFET N-CH 30V 40A DP Toshiba Semiconductor and Storage |
5,686 | - |
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Datasheet |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5 nC @ 10 V | ±20V | 1150 pF @ 10 V | - | - | - | - | - | Surface Mount | DPAK |
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TK40P04M1(T6RSS-Q)MOSFET N-CH 40V 40A DP Toshiba Semiconductor and Storage |
6,191 | - |
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Datasheet |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2.3V @ 200µA | 29 nC @ 10 V | ±20V | 1920 pF @ 10 V | - | 47W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK4A60DA(STA4,Q,M)MOSFET N-CH 600V 3.5A TO220SIS Toshiba Semiconductor and Storage |
3,900 | - |
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π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | - | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK10S04K3L(T6L1,NQMOSFET N-CH 40V 10A DPAK Toshiba Semiconductor and Storage |
2,123 | - |
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Datasheet |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10 nC @ 10 V | ±20V | 410 pF @ 10 V | - | 25W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK11A60D(STA4,Q,M)MOSFET N-CH 600V 11A TO220SIS Toshiba Semiconductor and Storage |
6,995 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK15A60D(STA4,Q,M)MOSFET N-CH 600V 15A TO220SIS Toshiba Semiconductor and Storage |
2,606 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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