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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFD16N02L16A, 20V, 0.022 OHM, N-CHANNEL L Harris Corporation |
1,793 | 0.09 |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Tc) | 5V | 22mOhm @ 16A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1300 pF @ 20 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IRF712S24971.7A, 400V, 5OHM, N-CHANNEL, Harris Corporation |
1,600 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP2P10P-CHANNEL POWER MOSFET Harris Corporation |
11,516 | 0.09 |
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Datasheet |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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HUF75307D3MOSFET N-CH 55V 15A IPAK Harris Corporation |
7,768 | - |
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Datasheet |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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RF1S15N06SMN-CHANNEL POWER MOSFET Harris Corporation |
4,894 | 0.09 |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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IRFD1Z3SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation |
12,328 | 0.10 |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Tc) | 10V | 3.2Ohm @ 250mA, 10V | 4V @ 250µA | 3 nC @ 10 V | ±20V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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RF1S45N02LSM9AN-CHANNEL POWER MOSFET Harris Corporation |
2,400 | 0.10 |
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Datasheet |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP6P10P-CHANNEL POWER MOSFET Harris Corporation |
41,954 | 0.10 |
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Datasheet |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | - | ±20V | 800 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF9512P-CHANNEL POWER MOSFET Harris Corporation |
4,210 | 0.10 |
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Datasheet |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.5A (Tc) | 10V | 1.6Ohm @ 1.5A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFD1101A, 100V, 0.600 OHM, N-CHANNEL Harris Corporation |
43,868 | 0.11 |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
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