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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFD14N06LSM9AN-CHANNEL POWER MOSFET Harris Corporation |
2,500 | 0.07 |
|
Datasheet |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFD112SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation |
1,371 | 0.07 |
|
Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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IRFR1219AN-CHANNEL POWER MOSFET Harris Corporation |
2,500 | 0.07 |
|
Datasheet |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFR91109AP-CHANNEL POWER MOSFET Harris Corporation |
2,500 | 0.07 |
|
Datasheet |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFR321N-CHANNEL POWER MOSFET Harris Corporation |
1,802 | 0.07 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 3.1A (Ta) | 10V | 1.8Ohm @ 1.7A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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RF1K49211N-CHANNEL POWER MOSFET Harris Corporation |
1,588 | 0.07 |
|
Datasheet |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 7A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC |
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RFD20N03N-CHANNEL POWER MOSFET Harris Corporation |
10,550 | 0.07 |
|
Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 25mOhm @ 20A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1150 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRF710PFET, 2A I(D), 400V, 3.6OHM, 1-E Harris Corporation |
4,630 | 0.20 |
|
Datasheet |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF621N-CHANNEL POWER MOSFET Harris Corporation |
13,250 | 0.08 |
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Datasheet |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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BUZ73AMOSFET N-CH 200V 5.5A TO220-3 Harris Corporation |
12,259 | 0.20 |
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Datasheet |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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