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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF75333S3MOSFET N-CH 55V 66A D2PAK Harris Corporation |
1,257 | 0.11 |
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Datasheet |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 66A (Tc) | - | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFD9113-0.6A, -80V, 1.6 OHM, P-CHANNEL Harris Corporation |
1,090 | 0.11 |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 600mA (Ta) | - | 1.6Ohm @ 300mA, 10V | - | 15 nC @ 15 V | - | 250 pF @ 25 V | - | - | - | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
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IRF9533P-CHANNEL POWER MOSFET Harris Corporation |
11,834 | 0.12 |
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Datasheet |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 10A (Tc) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFD213MOSFET N-CH 250V 450MA 4DIP Harris Corporation |
5,563 | 0.12 |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 450mA (Ta) | - | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | - | 140 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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RF1S23N06LESMN-CHANNEL POWER MOSFET Harris Corporation |
5,549 | 0.12 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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HUF75329P3MOSFET N-CH 55V 49A TO220-3 Harris Corporation |
3,077 | - |
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Datasheet |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 24mOhm @ 49A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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RF1S17N06LSMLOGIC LEVEL GATE (5V) DEVICE Harris Corporation |
4,000 | 0.12 |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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RF1S25N06SMN-CHANNEL POWER MOSFET Harris Corporation |
3,005 | 0.12 |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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RFD16N03LSM9AN-CHANNEL POWER MOSFET Harris Corporation |
1,540 | 0.12 |
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Datasheet |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF9510MOSFET P-CH 100V 4A TO220AB Harris Corporation |
1,187 | 0.12 |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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