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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPH3207WSGANFET N-CH 650V 50A TO247-3 Transphorm |
6,522 | 6.64 |
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Datasheet |
- | TO-247-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42 nC @ 8 V | ±18V | 2197 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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TPH3202PDGANFET N-CH 600V 9A TO220AB Transphorm |
8,196 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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TPH3202LSGANFET N-CH 600V 9A 3PQFN Transphorm |
3,416 | - |
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Datasheet |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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TPH3208PDGANFET N-CH 650V 20A TO220AB Transphorm |
6,493 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-220AB |
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TPH3208LSGANFET N-CH 650V 20A 3PQFN Transphorm |
4,216 | - |
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Datasheet |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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TPH3205WSBGANFET N-CH 650V 36A TO247-3 Transphorm |
7,363 | - |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 36A (Tc) | 10V | 60mOhm @ 22A, 8V | 2.6V @ 700µA | 42 nC @ 8 V | ±18V | 2200 pF @ 400 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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TPH3206LDGBGANFET N-CH 650V 16A PQFN Transphorm |
4,066 | - |
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Datasheet |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 16A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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TPH3212PSGANFET N-CH 650V 27A TO220AB Transphorm |
9,629 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 27A (Tc) | 10V | 72mOhm @ 17A, 8V | 2.6V @ 400uA | 14 nC @ 8 V | ±18V | 1130 pF @ 400 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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TPH3206PSBGANFET N-CH 650V 16A TO220AB Transphorm |
8,761 | 1.94 |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | ±18V | 720 pF @ 480 V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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TPH3206LDBGANFET N-CH 650V 16A PQFN Transphorm |
2,091 | - |
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Datasheet |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | ±18V | 720 pF @ 480 V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
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