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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TP65H150G4LSG-TR650 V 13 A GAN FET Transphorm |
2,832 | 4.59 |
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Datasheet |
- | 3-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 8 nC @ 10 V | ±20V | 598 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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TP65H070LDG-TR650 V 25 A GAN FET Transphorm |
662 | 10.38 |
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Datasheet |
TP65H070L | 3-PowerDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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TP65H480G4JSGB-TRGANFET N-CH 650V 3.6A QFN5X6 Transphorm |
3,886 | - |
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Datasheet |
SuperGaN® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 3.6A (Tc) | 6V | 560mOhm @ 3A, 6V | 2.8V @ 500µA | 5 nC @ 10 V | ±10V | 414 pF @ 400 V | - | 13.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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TP65H300G4LSGB-TRGANFET N-CH 650V 6.5A QFN8X8 Transphorm |
2,893 | - |
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Datasheet |
SuperGaN® | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 6.5A (Tc) | 6V | 312mOhm @ 6.5A, 6V | 2.8V @ 500µA | 8.8 nC @ 10 V | ±12V | 730 pF @ 400 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (8x8) |
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TP65H300G4JSGB-TRGANFET N-CH 650V 9.2A QFN5X6 Transphorm |
3,899 | - |
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Datasheet |
SuperGaN® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 9.2A (Tc) | 6V | 312mOhm @ 6.5A, 6V | 2.8V @ 500µA | 3.5 nC @ 10 V | ±10V | 400 pF @ 400 V | - | 41.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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TP65H150G4LSGGAN FET N-CH 650V PQFN Transphorm |
2,674 | - |
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Datasheet |
- | 3-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 8 nC @ 10 V | ±20V | 598 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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TP65H100G4LSGB-TRHi Volt FETs Transphorm |
2,960 | - |
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SuperGaN® | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 18.9A (Tc) | 10V | 110mOhm @ 12A, 10V | 4.1V @ 1.8mA | 14.4 nC @ 10 V | ±20V | 818 pF @ 400 V | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (8x8) |
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TP65H050WSQAGANFET N-CH 650V 36A TO247-3 Transphorm |
3,756 | 16.54 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 36A (Tc) | 10V | 60mOhm @ 25A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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TP65H035WSQAGANFET N-CH 650V 47.2A TO247-3 Transphorm |
4,846 | 18.56 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 24 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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TPH3208LDGGANFET N-CH 650V 20A 3PQFN Transphorm |
3,511 | 8.65 |
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Datasheet |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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