| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDP05120G1_T0_00001TO-220AC, SIC |
1,943 | 0.62 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 252pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1265G1_T0_00001TO-220AC, SIC |
2,000 | 0.63 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 452pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
NXPSC06650X6QDIODE SIL CARBIDE 650V 6A TO220F |
197 | 0.80 |
|
Datasheet |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
|
IDH10S60CAKSA1DIODE SIL CARB 600V 10A TO220-2 |
6,184 | 0.74 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
PCDP0665G1_T0_00001TO-220AC, SIC |
1,998 | 0.43 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 228pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WND45P16WQDIODE GEN PURP 1.6KV 45A TO247-2 |
1,008 | 0.64 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1600 V | 45A | 1.4 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Through Hole | TO-247-2 | 150°C |
|
MUR6060B-BPDIODE GEN PURP 600V 60A TO247AD |
512 | 0.64 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 15 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
FFSB0465ADIODE SIL CARB 650V 7.7A D2PAK-2 |
770 | 0.40 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 7.7A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
CDBJFSC5650-GDIODE SIL CARBIDE 650V 5A TO220F |
346 | 0.59 |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 430pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
|
SICRF10650DIODE SIL CARB 650V 10A ITO220AC |
194 | 0.78 |
|
Datasheet |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 695pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
PSDH6060L1_T0_00001TO-247AD-2LD, FAST |
1,425 | 0.46 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.75 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 205 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
MBRB2515LT4GDIODE SCHOTTKY 15V 25A D2PAK |
214 | 0.62 |
|
Datasheet |
SWITCHMODE™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 15 V | 25A | 450 mV @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15 mA @ 15 V | - | - | - | Surface Mount | D2PAK | 100°C (Max) |
|
S3D20065EDIODE SCHOTTKY SILICON CARBIDE S |
2,500 | - |
|
Datasheet |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (8x8) | - |
|
STPSC6H12B-TR1DIODE SIL CARBIDE 1.2KV 6A DPAK |
7,403 | 0.69 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 6A | 1.9 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 330pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
|
|
VS-100BGQ030DIODE SCHOTTKY 30V 100A POWIRTAB |
144 | - |
|
Datasheet |
- | PowerTab™, PowIRtab™ | Bulk | Obsolete | Schottky | 30 V | 100A | 580 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4 mA @ 30 V | - | - | - | Chassis Mount | PowIRtab™ | -55°C ~ 150°C |
|
RHRU75100DIODE AVALANCHE 1KV 75A TO218 |
149 | 0.78 |
|
Datasheet |
- | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 75A | 3 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
RHRU7540DIODE AVALANCHE 400V 75A TO218 |
549 | 0.79 |
|
Datasheet |
- | TO-218-1 | Bulk | Active | Avalanche | 400 V | 75A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 µA @ 400 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
FFSPF0665ADIODE SIC 650V 6A TO220F-2FS |
898 | 0.65 |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
IV1D06006O2DIODE SIL CARB 650V 17.4A TO220 |
132 | 0.87 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 17.4A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 212pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
CDBD2SC21200-GDIODE SIL CARB 1.2KV 6.2A TO263 |
381 | 0.63 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 6.2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 136pF @ 0V, 1MHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |