| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4938DIODE GEN PURP 200V 500MA DO35 |
57,593 | 0.00 |
|
Datasheet |
- | DO-204AH, DO-35, Axial | Bulk | Obsolete | Standard | 200 V | 500mA | 1 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 75 V | 5pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | 175°C (Max) |
|
STPSC6H065BY-TRDIODE SIL CARBIDE 650V 6A DPAK |
7,471 | 0.50 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | - | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DPAK | -40°C ~ 175°C |
|
IDK10G65C5XTMA1DIODE SIL CARB 650V 10A TO263-2 |
5,530 | 0.54 |
|
Datasheet |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 1.7 mA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
WNSC2D08650DJDIODE SIL CARBIDE 650V 8A DPAK |
7,463 | 0.47 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C |
|
BYQ60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 |
569 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
BYV60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 |
468 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 79 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
SCS304APC9DIODE SILICON CARBIDE 650V 4A |
862 | 0.47 |
|
Datasheet |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
|
RFUS20NS4STLDIODE GEN PURP 430V 20A LPDS |
259 | 0.41 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 430 V | 20A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | - | - | Surface Mount | LPDS | 150°C (Max) |
|
RBQ30NS45BTLDIODE SCHOTTKY 45V 30A LPDS |
706 | 0.42 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 45 V | 30A | 590 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 45 V | - | - | - | Surface Mount | LPDS | 150°C |
|
WNSC2D10650QDIODE SIL CARB 650V 10A TO220AC |
995 | - |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
MUR3040DIODE GEN PURP 400V 15A TO218 |
7,505 | 0.57 |
|
Datasheet |
- | TO-218-2 | Bulk | Active | Standard | 400 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 35 µA @ 400 V | 175pF @ 4V, 1MHz | - | - | Through Hole | TO-218 | -65°C ~ 175°C |
|
SDT05S60DIODE SIL CARB 600V 5A TO220-2 |
2,481 | 0.57 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 170pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
RHRU5060DIODE AVALANCHE 600V 50A TO218 |
734 | 0.57 |
|
Datasheet |
- | TO-218-1 | Bulk | Active | Avalanche | 600 V | 50A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 µA @ 600 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
WNSC6D166506QDIODE SIL CARB 650V 16A TO220AC |
2,976 | - |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
RURG8080DIODE AVALANCHE 800V 80A TO247-2 |
703 | 0.57 |
|
Datasheet |
- | TO-247-2 | Bulk | Active | Avalanche | 800 V | 80A | 1.9 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 800 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
RURG8070DIODE AVALANCHE 700V 80A TO247-2 |
450 | 0.57 |
|
Datasheet |
- | TO-247-2 | Bulk | Active | Avalanche | 700 V | 80A | 1.9 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 700 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
BYC30W-600PT2QDIODE GEN PURP 600V 30A TO247-2 |
1,787 | - |
|
Datasheet |
- | TO-247-2 | Bulk | Active | Standard | 600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 34 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
PSDH60120L1_T0_00001TO-247AD-2LD, FAST |
1,500 | 0.50 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 330 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
S3D08065LDIODE SIL CARBIDE 650V 24A 5DFN |
1,200 | - |
|
Datasheet |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 24A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 650pF @ 0V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |
|
BYC30W-1200PQDIODE GEN PURP 1.2KV 30A TO247-2 |
386 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |