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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GPI65060DFCGaNFET N-CH 650V 60A DFN8x8 cu GaNPower |
1,438 | - |
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Datasheet |
- | 8-DFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A | 6V | 30mOhm @ 6A, 12V | 1.2V @ 3.5mA | 16 nC @ 6 V | +7.5V, -12V | 420 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (8x8) |
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GPI65007DF56GaNFET N-CH 650V 7A DFN5x6 GaNPower |
3,506 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 7A | 6V | - | 1.5V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 76.1 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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GPI90005DF88GaNFET N-CH 900V 5A DFN8x8 GaNPower |
4,020 | - |
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Datasheet |
- | 8-DFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 900 V | 5A | 6V | 320mOhm @ 1A, 6V | 1.3V @ 3.5mA | 1.6 nC @ 6 V | +7.5V, -12V | 39 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (8x8) |
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GPI65015TOGANFET N-CH 650V 15A TO220 GaNPower |
4,461 | 1.50 |
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Datasheet |
- | Die | Tube | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A | 6V | - | 1.2V @ 3.5mA | 3.3 nC @ 6 V | +7.5V, -12V | 123 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPI65060DFNGANFET N-CH 650V 60A DFN8X8 GaNPower |
3,790 | 6.00 |
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Datasheet |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A | 6V | - | 1.2V @ 3.5mA | 16 nC @ 6 V | +7.5V, -12V | 420 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPIHV30SB5LGANFET N-CH 1200V 30A TO263-5L GaNPower |
6,073 | 4.40 |
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Datasheet |
- | Die | Tube | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 30A | 6V | - | 1.4V @ 3.5mA | 8.25 nC @ 6 V | +7.5V, -12V | 236 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPIXV30DFNGANFET N-CH 1200V 30A DFN8X8 GaNPower |
9,676 | - |
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Datasheet |
- | Die | Bag | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 30A | 6V | - | 1.4V @ 3.5mA | 8.25 nC @ 6 V | +7.5V, -12V | 236 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPIHV5DKGaNFET N-CH 1200V 5A TO252 GaNPower |
2,746 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 5A | 6V | - | 1.7V @ 3.5mA | 1.9 nC @ 6 V | +7.5V, -12V | 90 pF @ 700 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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GPIHV10DKGaNFET N-CH 1200V 10A TO252 GaNPower |
2,391 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 10A | 6V | - | 1.7V @ 3.5mA | 3.5 nC @ 6 V | +7.5V, -12V | 105 pF @ 700 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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GPIHV7DKGaNFET N-CH 1200V 7A TO252 GaNPower |
9,717 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 7A | 6V | - | 1.7V @ 3.5mA | 3.1 nC @ 6 V | +7.5V, -12V | 90 pF @ 700 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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