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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GPI65005DF68GaNFET N-CH 650V 5A DFN6x8 GaNPower |
450 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 5A | 6V | - | 1.7V @ 3.5mA | 1.6 nC @ 6 V | +7.5V, -12V | 39 pF @ 500 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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GPI65005DFGANFET N-CH 650V 5A DFN 5X6 GaNPower |
167 | 2.00 |
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Datasheet |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 5A | 6V | - | 1.4V @ 1.75mA | 2.6 nC @ 6 V | +7.5V, -12V | 45 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPI90007DF88GaNFET N-CH 900V 7A DFN8x8 GaNPower |
642 | - |
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Datasheet |
- | 8-DFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 900 V | 7A | 6V | 225mOhm @ 1.4A, 6V | 1.2V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 60 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (8x8) |
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GPI65010DF56GANFET N-CH 650V 10A DFN 5X6 GaNPower |
263 | 4.00 |
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Datasheet |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 10A | 6V | - | 1.4V @ 3.5mA | 2.6 nC @ 6 V | +7.5V, -12V | 90 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPI90010DF88GaNFET N-CH 900V 10A DFN8x8 GaNPower |
2,941 | - |
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Datasheet |
- | 8-DFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 900 V | 10A | 6V | 162mOhm @ 2.5A, 6V | 1.2V @ 3.5mA | 2.6 nC @ 6 V | +7.5V, -12V | 78 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (8x8) |
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GPI65015DFNGANFET N-CH 650V 15A DFN 8X8 GaNPower |
160 | 6.00 |
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Datasheet |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A | 6V | - | 1.2V @ 3.5mA | 3.3 nC @ 6 V | +7.5V, -12V | 116 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPI65008DF68GaNFET N-CH 650V 8A DFN6x8 GaNPower |
990 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 8A | 6V | - | 1.7V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 63 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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GPI65008DF56GANFET N-CH 650V 8A DFN5X6 GaNPower |
100 | 3.20 |
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Datasheet |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 8A | 6V | - | 1.4V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 63 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPI65030DFNGANFET N-CH 650V 30A DFN8X8 GaNPower |
100 | 12.00 |
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Datasheet |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.2V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPI65030TO5LGaNFET N-CH 650V 30A TO263-5L GaNPower |
4,403 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.4V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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