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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPCC8104,L1Q(CMMOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage |
5,080 | - |
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- |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPCC8105,L1Q(CMMOSFET P-CH 30V 23A 8TSON Toshiba Semiconductor and Storage |
2,514 | - |
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- |
U-MOSVI | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 7.8mOhm @ 11.5A, 10V | 2V @ 500µA | 76 nC @ 10 V | +20V, -25V | 3240 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TPCC8136.LQMOSFET P-CH 20V 9.4A 8TSON Toshiba Semiconductor and Storage |
3,328 | - |
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- |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9.4A (Ta) | 1.8V, 4.5V | 16mOhm @ 9.4A, 4.5V | 1.2V @ 1mA | 36 nC @ 5 V | ±12V | 2350 pF @ 10 V | - | 700mW (Ta), 18W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TK40J20D,S1F(OMOSFET N-CH 200V 40A TO3P Toshiba Semiconductor and Storage |
7,100 | - |
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- |
π-MOSVIII | TO-3P-3, SC-65-3 | Tray | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 40A (Ta) | 10V | 44mOhm @ 20A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4300 pF @ 100 V | - | 260W (Tc) | 150°C | - | - | Through Hole | TO-3P(N) |
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TPCC8104,L1QMOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage |
7,515 | - |
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- |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TK12J60W,S1VE(SMOSFET N-CH 600V 11.5A TO3P Toshiba Semiconductor and Storage |
6,276 | - |
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- |
- | TO-3P-3, SC-65-3 | Tray | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 110W (Tc) | 150°C | - | - | Through Hole | TO-3P(N) |
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TPCA8128,L1QMOSFET P-CH 30V 34A 8SOP Toshiba Semiconductor and Storage |
6,835 | - |
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- |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115 nC @ 10 V | +20V, -25V | 4800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK430A60F,S4X(SMOSFET N-CH Toshiba Semiconductor and Storage |
6,663 | - |
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Datasheet |
U-MOSIX | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1.75mA | 48 nC @ 10 V | ±30V | 1940 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK370A60F,S4X(SMOSFET N-CH Toshiba Semiconductor and Storage |
4,152 | - |
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Datasheet |
U-MOSIX | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 2.04mA | 55 nC @ 10 V | ±30V | 2200 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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SSM3K15CT,L3FMOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
2,779 | - |
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Datasheet |
- | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | 150°C | - | - | Surface Mount | CST3 |
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