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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPCA8064-H,LQ(CMMOSFET N-CH 30V 20A 8SOP Toshiba Semiconductor and Storage |
4,245 | - |
|
Datasheet |
U-MOSVII-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 8.2mOhm @ 10A, 10V | 2.3V @ 200µA | 23 nC @ 10 V | ±20V | 1900 pF @ 10 V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPCA8065-H,LQ(SMOSFET N-CH 30V 16A 8SOP Toshiba Semiconductor and Storage |
8,101 | - |
|
Datasheet |
U-MOSVII-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 11.4mOhm @ 8A, 10V | 2.3V @ 200µA | 20 nC @ 10 V | ±20V | 1600 pF @ 10 V | - | 1.6W (Ta), 25W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPCA8120,LQ(CMMOSFET P-CH 30V 45A 8SOP Toshiba Semiconductor and Storage |
9,773 | - |
|
Datasheet |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Ta) | 4.5V, 10V | 3mOhm @ 22.5A, 10V | 2V @ 1mA | 190 nC @ 10 V | +20V, -25V | 7420 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPCA8128,LQ(CMMOSFET P-CH 30V 34A 8SOP Toshiba Semiconductor and Storage |
6,562 | - |
|
Datasheet |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115 nC @ 10 V | +20V, -25V | 4800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
TPCC8009,LQ(OMOSFET N-CH 30V 24A 8TSON Toshiba Semiconductor and Storage |
9,492 | - |
|
Datasheet |
U-MOSIV | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta) | - | 7mOhm @ 12A, 10V | 3V @ 200µA | 26 nC @ 10 V | - | 1270 pF @ 10 V | - | - | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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|
TPCC8065-H,LQ(SMOSFET N-CH 30V 13A 8TSON Toshiba Semiconductor and Storage |
9,773 | - |
|
Datasheet |
U-MOSVII-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 11.4mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPCC8066-H,LQ(SMOSFET N-CH 30V 11A 8TSON Toshiba Semiconductor and Storage |
2,389 | - |
|
Datasheet |
U-MOSVII-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 15mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 700mW (Ta), 17W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPCC8067-H,LQ(SMOSFET N-CH 30V 9A 8TSON Toshiba Semiconductor and Storage |
4,626 | - |
|
Datasheet |
U-MOSVII-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 25mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5 nC @ 10 V | ±20V | 690 pF @ 10 V | - | 700mW (Ta), 15W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TK16J60W,S1VQMOSFET N-CH 600V 15.8A TO3P Toshiba Semiconductor and Storage |
4,674 | - |
|
Datasheet |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
TK8A10K3,S5QMOSFET N-CH 100V 8A TO220SIS Toshiba Semiconductor and Storage |
7,485 | - |
|
Datasheet |
U-MOSIV | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Ta) | 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 12.9 nC @ 10 V | ±20V | 530 pF @ 10 V | - | 18W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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