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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK32A12N1,S4XMOSFET N-CH 120V 32A TO220SIS Toshiba Semiconductor and Storage |
3,872 | 0.29 |
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Datasheet |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34 nC @ 10 V | ±20V | 2000 pF @ 60 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK7R4A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
100 | 0.29 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 7.4mOhm @ 25A, 10V | 2.5V @ 500µA | 44 nC @ 10 V | ±20V | 2800 pF @ 50 V | - | 42W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TK22E10N1,S1XMOSFET N CH 100V 52A TO220 Toshiba Semiconductor and Storage |
4,137 | 0.28 |
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Datasheet |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 72W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK6R7A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,537 | 0.32 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 4.5V, 10V | 6.7mOhm @ 28A, 10V | 2.5V @ 500µA | 58 nC @ 10 V | ±20V | 3455 pF @ 50 V | - | 42W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TK7A90E,S4XMOSFET N-CH 900V 7A TO220SIS Toshiba Semiconductor and Storage |
3,486 | 0.35 |
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Datasheet |
π-MOSVIII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK3R2E06PL,S1XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
3,310 | 0.33 |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2.5V @ 700µA | 71 nC @ 10 V | ±20V | 5000 pF @ 30 V | - | 168W (Tc) | 175°C | - | - | Through Hole | TO-220 |
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TK40A10N1,S4XMOSFET N-CH 100V 40A TO220SIS Toshiba Semiconductor and Storage |
1,690 | 0.39 |
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Datasheet |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK33S10N1L,LQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
4,782 | 0.36 |
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Datasheet |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TK4R1A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
1,204 | 0.43 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 4.1mOhm @ 40A, 10V | 2.5V @ 1mA | 104 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 54W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TK10A60W5,S5VXMOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage |
3,740 | 0.43 |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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