86+15817455051
Kyle@hkhaochip.com
Upload BOM
FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK20G60W,RVQMOSFET N CH 600V 20A D2PAK Toshiba Semiconductor and Storage |
1,960 | 0.27 |
|
Datasheet |
DTMOSIV | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
XPQ1R004PB,LXHQ40V U-MOS IX-H L-TOGL 1.0MOHM Toshiba Semiconductor and Storage |
4,500 | - |
|
Datasheet |
U-MOSIX-H | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 1mOhm @ 100A, 10V | 3V @ 500µA | 84 nC @ 10 V | ±20V | 6890 pF @ 10 V | - | 230W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | L-TOGL™ |
|
|
TK9R6E15Q5,S1X150V UMOS10-HSD TO-220 9.6MOHM Toshiba Semiconductor and Storage |
380 | - |
|
Datasheet |
U-MOSX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 104A (Ta), 52A (Tc) | 8V, 10V | 9.6mOhm @ 26A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±20V | 3690 pF @ 75 V | - | 200W (Tc) | 175°C | - | - | Through Hole | TO-220 |
|
|
TPW5200FNH,L1QPB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage |
4,655 | 0.26 |
|
Datasheet |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 800mW (Ta), 142W (Tc) | 150°C | - | - | Surface Mount | 8-DSOP Advance |
|
TK13A50D(STA4,Q,M)MOSFET N-CH 500V 13A TO220SIS Toshiba Semiconductor and Storage |
110 | 0.54 |
|
Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Ta) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
|
XPJR6604PB,LXHQ40V; UMOS9; 0.66MOHM; S-TOGL Toshiba Semiconductor and Storage |
7,017 | - |
|
Datasheet |
U-MOSIX-H | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 0.66mOhm @ 100A, 10V | 3V @ 1mA | 128 nC @ 10 V | ±20V | 11380 pF @ 10 V | - | 375W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | S-TOGL™ |
|
TK160F10N1L,LQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
914 | 0.30 |
|
Datasheet |
U-MOSVIII-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 2.4mOhm @ 80A, 10V | 3.5V @ 1mA | 122 nC @ 10 V | ±20V | 10100 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
|
|
TK7R4A15Q5,S4X150V UMOS10-HSD TO-220SIS 7.4MOH Toshiba Semiconductor and Storage |
400 | - |
|
Datasheet |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 57A (Tc) | 8V, 10V | 7.4mOhm @ 28.5A, 10V | 4.5V @ 1.4mA | 66 nC @ 10 V | ±20V | 4970 pF @ 75 V | - | 46W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
|
TK210V65Z,LQMOSFET N-CH 650V 15A 5DFN Toshiba Semiconductor and Storage |
4,630 | 0.56 |
|
Datasheet |
DTMOSVI | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 210mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
|
|
TK7R2E15Q5,S1X150V UMOS10-HSD TO-220 7.2MOHM Toshiba Semiconductor and Storage |
400 | - |
|
Datasheet |
U-MOSX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Ta), 84A (Tc) | 8V, 10V | 7.2mOhm @ 42A, 10V | 4.5V @ 1.4mA | 66 nC @ 10 V | ±20V | 4970 pF @ 75 V | - | 230W (Tc) | 175°C | - | - | Through Hole | TO-220 |
- Help you to save your cost and time.
- Reliable package for your goods.
- Fast reliable delivery to save time.
- Quality premium after-sale service.
