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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFRC20TRRMOSFET N-CH 600V 2A DPAK Vishay Siliconix |
9,987 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFBC30LMOSFET N-CH 600V 3.6A I2PAK Vishay Siliconix |
2,516 | - |
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- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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SIE802DF-T1-E3MOSFET N-CH 30V 60A 10POLARPAK Vishay Siliconix |
3,025 | 0.44 |
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Datasheet |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 23.6A, 10V | 2.7V @ 250µA | 160 nC @ 10 V | ±20V | 7000 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
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SIE802DF-T1-GE3MOSFET N-CH 30V 60A 10POLARPAK Vishay Siliconix |
7,398 | 0.44 |
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Datasheet |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 23.6A, 10V | 2.7V @ 250µA | 160 nC @ 10 V | ±20V | 7000 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
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IRF624MOSFET N-CH 250V 4.4A TO220AB Vishay Siliconix |
9,389 | 0.20 |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHB22N60AE-GE3MOSFET N-CH 600V 20A D2PAK Vishay Siliconix |
7,767 | 0.46 |
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Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIR496DP-T1-GE3MOSFET N-CH 20V 35A PPAK SO-8 Vishay Siliconix |
3,385 | - |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | 1570 pF @ 10 V | - | 5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFB9N30APBFMOSFET N-CH 300V 9.3A TO220AB Vishay Siliconix |
3,423 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 9.3A (Tc) | 10V | 450mOhm @ 5.6A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 920 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHA22N60AEL-GE3MOSFET N-CH 600V 21A TO220 Vishay Siliconix |
3,062 | - |
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Datasheet |
EL | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 82 nC @ 10 V | ±30V | 1757 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SI7686DP-T1-E3MOSFET N-CH 30V 35A PPAK SO-8 Vishay Siliconix |
8,137 | 0.26 |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.8A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1220 pF @ 15 V | - | 5W (Ta), 37.9W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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