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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR320MOSFET N-CH 400V 3.1A DPAK Vishay Siliconix |
8,804 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR320TRMOSFET N-CH 400V 3.1A DPAK Vishay Siliconix |
6,620 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR320TRLMOSFET N-CH 400V 3.1A DPAK Vishay Siliconix |
4,687 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SIHP22N60AE-GE3MOSFET N-CH 600V 20A TO220AB Vishay Siliconix |
2,101 | 0.45 |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF9Z14SMOSFET P-CH 60V 6.7A D2PAK Vishay Siliconix |
5,711 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFBC30ALMOSFET N-CH 600V 3.6A I2PAK Vishay Siliconix |
3,748 | - |
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- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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IRC644PBFMOSFET N-CH 250V 14A TO220-5 Vishay Siliconix |
8,796 | - |
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Datasheet |
HEXFET® | TO-220-5 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1200 pF @ 25 V | Current Sensing | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-5 |
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IRFS11N50ATRRMOSFET N-CH 500V 11A D2PAK Vishay Siliconix |
2,724 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF840LCSTRRMOSFET N-CH 500V 8A D2PAK Vishay Siliconix |
2,913 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF530STRRMOSFET N-CH 100V 14A D2PAK Vishay Siliconix |
2,988 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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