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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMCM6501UNE023NEXPERIA PMCM6501UNE - 20V, N-CH NXP Semiconductors |
85,500 | 0.03 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PMN28UN,135MOSFET N-CH 12V 5.7A 6TSOP NXP USA Inc. |
16,992 | - |
|
Datasheet |
TrenchMOS™ | SC-74, SOT-457 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 5.7A (Tc) | 1.8V, 4.5V | 34mOhm @ 2A, 4.5V | 700mV @ 1mA (Typ) | 10.1 nC @ 4.5 V | ±8V | 740 pF @ 10 V | - | 1.75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
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PMCM6501VPEZSMALL SIGNAL FIELD-EFFECT TRANSI NXP Semiconductors |
6,826,065 | 0.12 |
|
Datasheet |
- | 6-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6.2A (Ta) | 1.8V, 4.5V | 25mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4 nC @ 4.5 V | ±8V | 1400 pF @ 6 V | - | 556mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WLCSP (1.48x0.98) |
|
PMCM6501VNEZPMCM6501VNE - 12V, N-CHANNEL TRE NXP USA Inc. |
2,009,850 | 0.12 |
|
Datasheet |
- | 6-XFBGA, WLCSP | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 7.3A (Ta) | 1.5V, 4.5V | 18mOhm @ 3A, 4.5V | 900mV @ 250µA | 24 nC @ 4.5 V | ±8V | 920 pF @ 6 V | - | 556mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WLCSP (1.48x0.98) |
|
PMCM6501UNEZPMCM6501UNE - 20V, N-CHANNEL TRE NXP USA Inc. |
4,464 | 0.12 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PH5830DLXPH5830 - N-CHANNEL TRENCHMOS LOG NXP USA Inc. |
152,950 | 0.04 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PH5830DL,115PH5830 - N-CHANNEL TRENCHMOS LOG NXP USA Inc. |
106,500 | 0.04 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK6213-30C,118NEXPERIA BUK6213-30C - 47A, 30V, NXP Semiconductors |
17,100 | 30500.00 |
|
Datasheet |
TrenchMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 47A (Tc) | 10V | 14mOhm @ 10A, 10V | 2.8V @ 1mA | 19.5 nC @ 10 V | ±16V | 1108 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
|
PH2525L,115NEXPERIA PH2525L - 100A, 25V, 0. NXP Semiconductors |
4,100 | 0.04 |
|
Datasheet |
TrenchMOS™ | SC-100, SOT-669 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 25A, 10V | 2.15V @ 1mA | 34.7 nC @ 4.5 V | ±20V | 4470 pF @ 12 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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PH1030DLSXPOWER MOS NXP USA Inc. |
1,400 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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