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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN3R5-80ES,127MOSFET N-CH 80V 120A I2PAK NXP USA Inc. |
4,668 | - |
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Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PSMN2R0-60ES,127MOSFET N-CH 60V 120A I2PAK NXP USA Inc. |
610 | 0.26 |
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Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BUK754R3-75C,127MOSFET N-CH 75V 100A TO220AB NXP USA Inc. |
9,719 | 0.27 |
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Datasheet |
TrenchMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 142 nC @ 10 V | ±20V | 11659 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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BUK654R0-75C,127MOSFET N-CH 75V 120A TO220AB NXP USA Inc. |
3,194 | 0.27 |
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Datasheet |
TrenchMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | 2.8V @ 1mA | 234 nC @ 10 V | ±16V | 15450 pF @ 25 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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PSMN3R3-80ES,127ELEMENT, NCHANNEL, SILICON, MOSF NXP USA Inc. |
1,415 | 0.27 |
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Datasheet |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.3mOhm @ 25A, 10V | 4V @ 1mA | 139 nC @ 10 V | ±20V | 9961 pF @ 40 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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BUK7C06-40AITE,118MOSFET N-CH 40V 75A D2PAK NXP USA Inc. |
3,200 | 0.27 |
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Datasheet |
TrenchMOS™ | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 6mOhm @ 50A, 10V | 4V @ 1mA | 120 nC @ 10 V | ±20V | 4300 pF @ 25 V | Current Sensing | 272W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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BUK7E2R7-30B,127MOSFET N-CH 30V 75A I2PAK NXP USA Inc. |
6,391 | 0.28 |
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Datasheet |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 10V | 2.7mOhm @ 25A, 10V | 4V @ 1mA | 91 nC @ 10 V | ±20V | 6212 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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PSMN057-200P,127MOSFET N-CH 200V 39A TO220AB NXP USA Inc. |
1,992 | 0.25 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BUK9E3R2-40B,127MOSFET N-CH 40V 100A I2PAK NXP USA Inc. |
7,053 | 0.28 |
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TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 2V @ 1mA | 94 nC @ 5 V | ±15V | 10502 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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BUK7E4R3-75C,127MOSFET N-CH 75V 100A I2PAK NXP USA Inc. |
3,002 | 0.32 |
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- |
TrenchMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 142 nC @ 10 V | ±20V | 11659 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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