| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS306AMC7GDIODE SIL CARB 650V 6A TO220FM |
5,601 | - |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
VS-82PF120DIODE GEN PURP 120V 80A DO203AB |
2,448 | 1.42 |
|
Datasheet |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 120 V | 80A | 1.4 V @ 220 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -55°C ~ 180°C |
|
DSS60-0045BDIODE SCHOTTKY 45V 60A TO247AD |
9,440 | 0.91 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Schottky | 45 V | 60A | 600 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 45 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 150°C |
|
GE10MPS06E-TR650V 10A TO-252-2 SIC SCHOTTKY M |
5,854 | - |
|
- |
MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 26A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 466pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
SCS306AGC16DIODE SIL CARB 650V 6A TO220ACP |
6,950 | - |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
|
VS-25F10DIODE GEN PURP 100V 25A DO203AA |
7,190 | 0.79 |
|
Datasheet |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 100 V | 25A | 1.3 V @ 78 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 100 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
|
SCS308AMC7GDIODE SIL CARB 650V 8A TO220FM |
5,102 | - |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
SCS308AGC16DIODE SIL CARB 650V 8A TO220ACP |
9,940 | - |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
JAN1N4247DIODE GEN PURP 600V 1A AXIAL |
3,463 | 3.19 |
|
Datasheet |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
SCS312AMC7GDIODE SIL CARB 650V 12A TO220FM |
8,395 | - |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
SCS312AGC16DIODE SIL CARB 650V 12A TO220ACP |
2,156 | - |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
GD30MPS06J-TR650V 30A TO-263-7 SIC SCHOTTKY M |
7,595 | - |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 735pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
SCS315AMC7GDIODE SIL CARB 650V 15A TO220FM |
5,508 | - |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
S5D10170A2DIODE SCHOTTKY SILICON CARBIDE S |
2,756 | - |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 44A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 978pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SCS315AGC16DIODE SIL CARB 650V 15A TO220ACP |
3,256 | - |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
PSC2065JJSIC DIODES AND FETS |
6,012 | - |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), Variant | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 680pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK R2P | -55°C ~ 175°C |
|
JANTX1N5617USDIODE GEN PURP 400V 1A D-5A |
2,292 | 1.62 |
|
Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 µA @ 400 V | 35pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
VS-1N1190DIODE GEN PURP 600V 35A DO203AB |
4,319 | 1.82 |
|
Datasheet |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 600 V | 35A | 1.7 V @ 110 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 600 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 190°C |
|
JANTX1N5615USDIODE GEN PURP 200V 1A A SQ-MELF |
7,427 | 1.67 |
|
Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Military | MIL-PRF-19500/429 | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
|
PSC2065LQSIC DIODES AND FETS |
4,257 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 680pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |