| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STTH15RQ06DDIODE GEN PURP 600V 15A TO220AC |
8,287 | 0.31 |
|
Datasheet |
ECOPACK® | TO-220-2 | Tube | Active | Standard | 600 V | 15A | 2.95 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
VS-E5PH7506LHN3DIODE GEN PURP 600V 75A TO247AD |
5,346 | 1.03 |
|
Datasheet |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 75A | 1.7 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 57 ns | 25 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-E5PX7506LHN3DIODE GEN PURP 600V 75A TO247AD |
7,868 | 1.03 |
|
Datasheet |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 75A | 2.2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 48 ns | 25 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-45EPF06LHM3DIODE GEN PURP 600V 45A TO247AD |
5,302 | 1.08 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 600 V | 45A | 1.31 V @ 45 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -40°C ~ 150°C |
|
VS-65APS12LHM3DIODE GEN PURP 1.2KV 65A TO247AD |
8,905 | 1.09 |
|
Datasheet |
- | TO-3P-3, SC-65-3 | Tube | Active | Standard | 1200 V | 65A | 1.12 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -40°C ~ 150°C |
|
|
VS-12FR20DIODE GEN PURP 200V 12A DO203AA |
2,623 | 0.81 |
|
Datasheet |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 12A | 1.26 V @ 38 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 200 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
|
TRS8E65F,S1QDIODE SIL CARB 650V 8A TO220-2L |
8,401 | 0.80 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 28pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
STTH810GY-TRDIODE GEN PURP 1KV 8A D2PAK |
8,134 | 0.40 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1000 V | 8A | 2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 5 µA @ 1000 V | - | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
|
VS-45EPF12LHM3DIODE GEN PURP 1.2KV 45A TO247AD |
5,470 | 1.14 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 45A | 1.44 V @ 45 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -40°C ~ 150°C |
|
VS-30APF10-M3DIODE GEN PURP 1KV 30A TO247AC |
8,946 | 1.14 |
|
Datasheet |
- | TO-247-3 | Tube | Active | Standard | 1000 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
|
STTH15R06FPDIODE GP 600V 15A TO220FPAC |
2,320 | 0.36 |
|
Datasheet |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 15A | 2.9 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 60 µA @ 600 V | - | - | - | Through Hole | TO-220FPAC | 175°C (Max) |
|
VS-40EPS16-M3DIODE GP 1.6KV 40A TO247AC |
6,765 | 1.16 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1600 V | 40A | 1.14 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
|
VS-65APS16LHM3DIODE GEN PURP 1.6KV 65A TO247AD |
8,866 | 1.17 |
|
Datasheet |
- | TO-3P-3, SC-65-3 | Tube | Active | Standard | 1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -40°C ~ 150°C |
|
VS-HFA06PB120-N3DIODE GP 1.2KV 6A TO247AC |
6,033 | 1.22 |
|
Datasheet |
HEXFRED® | TO-247-2 | Tube | Active | Standard | 1200 V | 6A | 3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 5 µA @ 1200 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
|
DSA1-12DDIODE AVALANCHE 1.2KV 2.3A |
9,568 | 0.83 |
|
Datasheet |
- | Radial | Box | Active | Avalanche | 1200 V | 2.3A | 1.34 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 700 µA @ 1200 V | - | - | - | Through Hole | - | -40°C ~ 150°C |
|
TRS10E65F,S1QDIODE SIL CARB 650V 10A TO220-2L |
3,742 | 0.98 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 36pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
TRS10A65F,S1QDIODE SIL CARB 650V 10A TO220F |
4,007 | 0.98 |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 36pF @ 650V, 1MHz | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
|
IDWD10G120C5XKSA1DIODE SIL CARB 1.2KV 34A TO247-2 |
6,810 | 1.45 |
|
Datasheet |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 34A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 730pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
TRS4A65F,S1QDIODE SIL CARBIDE 650V 4A TO220F |
4,029 | 0.51 |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 16pF @ 650V, 1MHz | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
|
TRS12E65F,S1QDIODE SIL CARB 650V 12A TO220-2L |
5,715 | 1.17 |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 65pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |