| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
APT10SCD120KDIODE SIL CARB 1.2KV 10A TO220 |
297 | 1.93 |
|
- |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |
|
JANTX1N6640USDIODE GEN PURP 50V 300MA D-5D |
181 | 1.62 |
|
Datasheet |
- | SQ-MELF, D | Bulk | Discontinued at Digi-Key | Standard | 50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 90 µA @ 50 V | - | Military | MIL-PRF-19500/578 & /609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
STPSC20H12G2-TRDIODE SIL CARB 1.2KV 20A D2PAK |
1,000 | 2.33 |
|
Datasheet |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK HV | -40°C ~ 175°C |
|
FFSH15120ADIODE SIL CARB 1.2KV 26A TO247-2 |
229 | 2.09 |
|
Datasheet |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 26A | 1.75 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 936pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH3065ADN-F155DIODE SIL CARB 650V 23A TO247-3 |
447 | 1.83 |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 887pF @ 1V, 100kHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
LSIC2SD065A20ADIODE SIL CARB 650V 45A TO220-2L |
873 | 2.08 |
|
Datasheet |
Gen2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 45A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 960pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
NDSH30120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
326 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 38A | 1.75 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1961pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
STPSC20H12DYDIODE SIL CARB 1.2KV 20A TO220AC |
970 | 2.33 |
|
Datasheet |
ECOPACK®2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
IDH15S120AKSA1DIODE SIL CARB 1.2KV 15A TO220-2 |
4,906 | 2.30 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1200 V | 750pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
ADC4D10120DDIODE SIL SIC 1200V 9A TO247-3 |
550 | - |
|
Datasheet |
WBG | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 9A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
RURU15080DIODE AVALANCHE 800V 150A TO218 |
301 | 2.34 |
|
Datasheet |
- | TO-218-1 | Bulk | Active | Avalanche | 800 V | 150A | 1.9 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 800 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
FFSH4065ADIODE SIL CARB 650V 48A TO247-2 |
551 | 2.73 |
|
Datasheet |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 48A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1989pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IV1D12015T2DIODE SIL CARB 1.2KV 44A TO247-2 |
120 | 2.91 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 44A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 888pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
PCDP20120G1_T0_00001TO-220AC, SIC |
1,993 | 1.83 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 1040pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
FFSH20120A-F155DIODE SIL CARB 1.2KV 30A TO247-2 |
579 | 1.73 |
|
Datasheet |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
PCDH20120G1_T0_006011200V SIC SCHOTTKY BARRIER DIODE |
1,500 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 1023pF @ 1V, 1MHz | - | - | Through Hole | TO-247AD-2 | -55°C ~ 175°C |
|
PCDB20120G1_R2_000011200V SIC SCHOTTKY BARRIER DIODE |
2,365 | - |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 1040pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
NDSH40120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
421 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 46A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 2840pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH30120A-F155DIODE SIL CARB 1.2KV 46A TO247-2 |
353 | 2.72 |
|
Datasheet |
- | TO-247-2 | Tray | Active | SiC (Silicon Carbide) Schottky | 1200 V | 46A | 1.75 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1740pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IV1D12020T2DIODE SIL CARB 1.2KV 54A TO247-2 |
110 | 3.83 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1114pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |