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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CGD65B240SH2650V GAN HEMT, 240MOHM, DFN5X6. Cambridge GaN Devices |
4,770 | - |
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Datasheet |
ICeGaN™ | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 7A | 12V | 336mOhm @ 500mA, 12V | 4.2V @ 2.3mA | 1.2 nC @ 12 V | +20V, -1V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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CGD65B200S2-T13650V GAN HEMT, 200MOHM, DFN5X6. Cambridge GaN Devices |
4,174 | - |
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Datasheet |
ICeGaN™ | 8-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 8.5A (Tc) | 9V, 20V | 280mOhm @ 600mA, 12V | 4.2V @ 2.75mA | 1.4 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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CGD65B130SH2650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices |
4,992 | - |
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Datasheet |
ICeGaN™ | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 12A | 12V | 182mOhm @ 900mA, 12V | 4.2V @ 4.2mA | 1.9 nC @ 12 V | +20V, -1V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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CGD65A130SH2650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices |
3,469 | - |
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Datasheet |
ICeGaN™ | 16-PowerVDFN | Cut Tape (CT) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 12A | 12V | 182mOhm @ 900mA, 12V | 4.2V @ 4.2mA | 1.9 nC @ 12 V | +20V, -1V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 16-DFN (8x8) |
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CGD65B130S2-T13650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices |
4,875 | - |
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Datasheet |
ICeGaN™ | 8-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | 9V, 20V | 182mOhm @ 900mA, 12V | 4.2V @ 4.2mA | 2.3 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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CGD65A130S2-T13650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices |
3,306 | - |
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ICeGaN™ | 16-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | 12V | 182mOhm @ 900mA, 12V | 4.2V @ 4.2mA | 2.3 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 16-DFN (8x8) |
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CGD65A055SH2650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices |
3,239 | - |
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Datasheet |
ICeGaN™ H2 | 16-PowerVDFN | Cut Tape (CT) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 27A | 12V | 77mOhm @ 2.2A, 12V | 4.2V @ 10mA | 4 nC @ 12 V | +20V, -1V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 16-DFN (8x8) |
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CGD65A055S2-T07650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices |
674 | - |
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Datasheet |
ICeGaN™ | 16-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 27A (Tc) | 12V | 77mOhm @ 2.2A, 12V | 4.2V @ 10mA | 6 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 16-DFN (8x8) |
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