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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NC1M120C75GTNGSiC MOSFET N 1200V 75mohm 47A 3 NovuSem |
2,400 | - |
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Datasheet |
NC1M | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | - | +20V, -5V | 1450 pF @ 1000 V | - | 288W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
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NC1M120C12HTNGSiC MOSFET N 1200V 12mohm 214A NovuSem |
100 | - |
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Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 214A (Tc) | 20V | 20mOhm @ 100A, 20V | 3.5V @ 40mA | - | +20V, -5V | 8330 pF @ 1000 V | - | 938W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C75HTNGSiC MOSFET N 1200V 75mohm 47A 4 NovuSem |
100 | - |
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Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | - | +20V, -5V | 1450 pF @ 1000 V | - | 288W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C75RRNGSiC MOSFET N 1200V 75mohm 46A 7 NovuSem |
100 | - |
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Datasheet |
NC1M | TO-263-8, DPak (7 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 46A (Tc) | 18V | 75mOhm @ 20A, 18V | 2.3V @ 5mA | - | +18V, -5V | 1402 pF @ 1000 V | - | 240W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7L |
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NC1M120C40GTNGSiC MOSFET N 1200V 40mohm 76A 3 NovuSem |
100 | - |
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Datasheet |
NC1M | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
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NC1M120C40HTNGSiC MOSFET N 1200V 40mohm 75A 4 NovuSem |
100 | - |
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Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 366W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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