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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS1M025120PN-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED |
124 | 8.28 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 3600 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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ASZM040120TN-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED |
4,133 | - |
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Datasheet |
- | TO-247-4 | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 68A (Tc) | 18V, 20V | 32mOhm @ 40A, 20V | 3.6V @ 9.5mA | 87 nC @ 18 V | +25V, -10V | 2820 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AS1M080120PN-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED |
2,043 | 2.51 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 79 nC @ 20 V | +25V, -10V | 1475 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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AS2M040120PN-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED |
4,894 | - |
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Datasheet |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 55mOhm @ 40A, 20V | 4V @ 10mA | 142 nC @ 20 V | +25V, -10V | 2946 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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AS1M025120TN-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED |
1,838 | 8.29 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 4200 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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AS1M040120TN-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED |
1,956 | 4.51 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 55mOhm @ 40A, 20V | 4V @ 10mA | 142 nC @ 20 V | +25V, -10V | 2946 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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