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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF75321S3SMOSFET N-CH 55V 35A D2PAK Harris Corporation |
991 | 0.08 |
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Datasheet |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 10V | 34mOhm @ 35A, 10V | 4V @ 250µA | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFR222N-CHANNEL POWER MOSFET Harris Corporation |
944 | 0.08 |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.8A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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IRFU222N-CHANNEL POWER MOSFET Harris Corporation |
900 | 0.08 |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.8A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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IRFU421N-CHANNEL POWER MOSFET Harris Corporation |
900 | 0.08 |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 2.5A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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IRFR421N-CHANNEL POWER MOSFET Harris Corporation |
1,000 | 0.08 |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 2.5A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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IRF96221563A, 200V, 2.4OHM, P-CHANNEL, POW Harris Corporation |
800 | 0.08 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF614ADVANCED POWER MOSFET Harris Corporation |
695 | - |
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Datasheet |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFD121SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation |
1,000 | 0.08 |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 1.3A (Tc) | 10V | 300mOhm @ 600mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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RF1S45N02LSMN-CHANNEL POWER MOSFET Harris Corporation |
800 | 0.09 |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 45A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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IRFD2200.8A 200V 0.800 OHM N-CHANNEL Harris Corporation |
913 | 0.10 |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 800mA (Ta) | 10V | 800mOhm @ 480mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
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