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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFBE30STRLPBFMOSFET N-CH 800V 4.1A D2PAK Vishay Siliconix |
700 | 0.75 |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHG180N60E-GE3MOSFET N-CH 600V 19A TO247AC Vishay Siliconix |
329 | 0.79 |
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Datasheet |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFS9N60ATRLPBFMOSFET N-CH 600V 9.2A D2PAK Vishay Siliconix |
950 | 0.76 |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF644STRRPBFMOSFET N-CH 250V 14A D2PAK Vishay Siliconix |
605 | 0.79 |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHB105N60EF-GE3MOSFET N-CH 600V 29A D2PAK Vishay Siliconix |
5,591 | 0.80 |
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Datasheet |
EF | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 102mOhm @ 13A, 10V | 5V @ 250µA | 53 nC @ 10 V | ±30V | 1804 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHH11N60EF-T1-GE3MOSFET N-CH 600V 11A PPAK 8 X 8 Vishay Siliconix |
1,405 | 0.83 |
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Datasheet |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 357mOhm @ 5.5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 1078 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SIHG24N80AE-GE3MOSFET N-CH 800V 21A TO247AC Vishay Siliconix |
460 | 0.86 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 21A (Tc) | - | 184mOhm @ 10A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±30V | 1836 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHH250N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
3,050 | 0.90 |
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Datasheet |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 250mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 915 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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IRFBC40LCPBF-BE3MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix |
843 | 0.92 |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | - | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHA125N60EF-GE3MOSFET N-CH 600V 11A TO220 Vishay Siliconix |
992 | 0.92 |
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Datasheet |
EF | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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