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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHB100N60E-GE3MOSFET N-CH 600V 30A D2PAK Vishay Siliconix |
1,004 | 1.06 |
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Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 1851 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHH080N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 8 Vishay Siliconix |
6,049 | 1.07 |
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Datasheet |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 80mOhm @ 17A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2557 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SIHP120N60E-GE3MOSFET N-CH 600V 25A TO220AB Vishay Siliconix |
844 | 1.08 |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1562 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHP38N60E-GE3MOSFET N-CH 600V 43A TO220AB Vishay Siliconix |
914 | 1.39 |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 65mOhm @ 19A, 10V | 4V @ 250µA | 183 nC @ 10 V | ±30V | 3600 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHH26N60E-T1-GE3MOSFET N-CH 600V 25A PPAK 8 X 8 Vishay Siliconix |
5,625 | 1.18 |
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Datasheet |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 135mOhm @ 13A, 10V | 4V @ 250µA | 116 nC @ 10 V | ±30V | 2815 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SUM85N15-19-E3MOSFET N-CH 150V 85A TO263 Vishay Siliconix |
972 | 1.22 |
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Datasheet |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 85A (Tc) | 10V | 19mOhm @ 30A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 4750 pF @ 25 V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHB24N65EFT1-GE3N-CHANNEL 650V Vishay Siliconix |
2,817 | 1.26 |
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Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2774 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHP065N60E-BE3N-CHANNEL 600V Vishay Siliconix |
1,486 | 1.52 |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHG068N60EF-GE3MOSFET N-CH 600V 41A TO247AC Vishay Siliconix |
374 | 1.27 |
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Datasheet |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHG065N60E-GE3MOSFET N-CH 600V 40A TO247AC Vishay Siliconix |
456 | 1.55 |
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Datasheet |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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