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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFI840GLCMOSFET N-CH 500V 4.5A TO220-3 Vishay Siliconix |
9,294 | - |
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Datasheet |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 850mOhm @ 2.7A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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SIHS36N50D-E3MOSFET N-CH 500V 36A SUPER-247 Vishay Siliconix |
8,056 | - |
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Datasheet |
- | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 130mOhm @ 18A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±30V | 3233 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
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IRFIZ48GMOSFET N-CH 60V 37A TO220-3 Vishay Siliconix |
8,345 | - |
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Datasheet |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 37A (Tc) | 10V | 18mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRFI9640GMOSFET P-CH 200V 6.1A TO220-3 Vishay Siliconix |
5,739 | - |
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- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 6.1A (Tc) | 10V | 500mOhm @ 3.7A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRLI640GMOSFET N-CH 200V 9.9A TO220-3 Vishay Siliconix |
8,762 | - |
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Datasheet |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.9A (Tc) | 4V, 5V | 180mOhm @ 5.9A, 5V | 2V @ 250µA | 66 nC @ 10 V | ±10V | 1800 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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SI7788DP-T1-GE3MOSFET N-CH 30V 50A PPAK SO-8 Vishay Siliconix |
9,580 | 0.31 |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 3.1mOhm @ 15A, 10V | 2.5V @ 250µA | 125 nC @ 10 V | ±20V | 5370 pF @ 15 V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SUV85N10-10-E3MOSFET N-CH 100V 85A TO220AB Vishay Siliconix |
6,192 | - |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 6550 pF @ 25 V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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SQ4840EY-T1_BE3MOSFET N-CH 40V 20.7A 8SOIC Vishay Siliconix |
6,438 | 0.69 |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 20.7A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 2440 pF @ 20 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SI4890DY-T1-E3MOSFET N-CH 30V 11A 8-SOIC Vishay Siliconix |
6,019 | 0.31 |
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Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12mOhm @ 11A, 10V | 800mV @ 250µA (Min) | 20 nC @ 5 V | ±25V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRF9640SMOSFET P-CH 200V 11A D2PAK Vishay Siliconix |
2,469 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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