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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7114DN-T1-GE3MOSFET N-CH 30V 11.7A PPAK1212-8 Vishay Siliconix |
7,774 | 0.19 |
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Datasheet |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.7A (Ta) | 4.5V, 10V | 7.5mOhm @ 18.3A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIHG21N65EF-GE3MOSFET N-CH 650V 21A TO247AC Vishay Siliconix |
5,390 | 0.70 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106 nC @ 10 V | ±30V | 2322 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SI7462DP-T1-E3MOSFET N-CH 200V 2.6A PPAK SO-8 Vishay Siliconix |
4,759 | - |
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Datasheet |
- | PowerPAK® SO-8 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Ta) | - | 130mOhm @ 4.1A, 10V | 4V @ 250µA | 30 nC @ 10 V | - | - | - | - | - | - | - | Surface Mount | PowerPAK® SO-8 |
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SI4634DY-T1-GE3MOSFET N-CH 30V 24.5A 8SO Vishay Siliconix |
5,798 | 0.37 |
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Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24.5A (Tc) | 4.5V, 10V | 5.2mOhm @ 15A, 10V | 2.6V @ 250µA | 68 nC @ 10 V | ±20V | 3150 pF @ 15 V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SI7366DP-T1-GE3MOSFET N-CH 20V 13A PPAK SO-8 Vishay Siliconix |
2,546 | - |
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- |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 13A (Ta) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 3V @ 250µA | 25 nC @ 4.5 V | ±20V | - | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SUD50N02-09P-E3MOSFET N-CH 20V TO252 Vishay Siliconix |
5,045 | - |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Ta) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 3V @ 250µA | 16 nC @ 4.5 V | ±20V | 1300 pF @ 10 V | - | 6.5W (Ta), 39.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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IRF9530SMOSFET P-CH 100V 12A D2PAK Vishay Siliconix |
3,949 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF9530STRLMOSFET P-CH 100V 12A D2PAK Vishay Siliconix |
3,771 | - |
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- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRL630SMOSFET N-CH 200V 9A D2PAK Vishay Siliconix |
5,009 | - |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRL630STRLMOSFET N-CH 200V 9A D2PAK Vishay Siliconix |
3,733 | - |
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- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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