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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFP344PBFMOSFET N-CH 450V 9.5A TO247-3 Vishay Siliconix |
9,061 | - |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 9.5A (Tc) | 10V | 630mOhm @ 5.7A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SUM09N20-270-E3MOSFET N-CH 200V 9A TO263 Vishay Siliconix |
3,724 | - |
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- |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 6V, 10V | 270mOhm @ 5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 580 pF @ 25 V | - | 3.75W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFDC20MOSFET N-CH 600V 320MA 4DIP Vishay Siliconix |
3,619 | - |
|
Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 320mA (Ta) | 10V | 4.4Ohm @ 190mA, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
SIHB22N65E-GE3MOSFET N-CH 650V 22A D2PAK Vishay Siliconix |
7,207 | 0.57 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 2415 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHG22N60EL-GE3MOSFET N-CH 600V 21A TO247AC Vishay Siliconix |
5,818 | 0.60 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 1690 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHD6N62ET1-GE3MOSFET N-CH 620V 6A TO252AA Vishay Siliconix |
7,880 | 0.16 |
|
Datasheet |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 620 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±30V | 578 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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IRFIB8N50KPBFMOSFET N-CH 500V 6.7A TO220-3 Vishay Siliconix |
4,097 | - |
|
Datasheet |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.7A (Tc) | 10V | 350mOhm @ 4A, 10V | 5V @ 250µA | 89 nC @ 10 V | ±30V | 2160 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRLR120TRPBFMOSFET N-CH 100V 7.7A DPAK Vishay Siliconix |
8,340 | 0.35 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRLR120TRLPBFMOSFET N-CH 100V 7.7A DPAK Vishay Siliconix |
3,788 | 0.35 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
SIR844DP-T1-GE3MOSFET N-CH 25V 50A PPAK SO-8 Vishay Siliconix |
4,088 | - |
|
Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 2.8mOhm @ 15A, 10V | 2.6V @ 250µA | 90 nC @ 10 V | ±20V | 3215 pF @ 10 V | - | 5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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