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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF620SMOSFET N-CH 200V 5.2A D2PAK Vishay Siliconix |
4,936 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF9510SMOSFET P-CH 100V 4A D2PAK Vishay Siliconix |
9,096 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHG11N80E-GE3MOSFET N-CH 800V 12A TO247AC Vishay Siliconix |
9,226 | 0.54 |
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Datasheet |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIR862DP-T1-GE3MOSFET N-CH 25V 50A PPAK SO-8 Vishay Siliconix |
8,133 | 0.14 |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 2.8mOhm @ 15A, 10V | 2.3V @ 250µA | 90 nC @ 10 V | ±20V | 3800 pF @ 10 V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRF9510STRLMOSFET P-CH 100V 4A D2PAK Vishay Siliconix |
2,902 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIRS700DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
5,207 | 0.93 |
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Datasheet |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 30A (Ta), 127A (Tc) | 7.5V, 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 5950 pF @ 50 V | - | 7.4W (Ta),132W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRF737LCMOSFET N-CH 300V 6.1A TO220AB Vishay Siliconix |
7,730 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFBC40LPBFMOSFET N-CH 600V 6.2A TO262-3 Vishay Siliconix |
6,750 | 0.53 |
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- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262-3 |
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SI3459DV-T1-E3MOSFET P-CH 60V 2.2A 6TSOP Vishay Siliconix |
5,827 | - |
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TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.2A (Tc) | 4.5V, 10V | 220mOhm @ 2.2A, 10V | 1V @ 250µA (Min) | 14 nC @ 10 V | ±20V | - | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
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SI4170DY-T1-GE3MOSFET N-CH 30V 30A 8SO Vishay Siliconix |
8,553 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 3.5mOhm @ 15A, 10V | 2.6V @ 250µA | 100 nC @ 10 V | ±20V | 4355 pF @ 15 V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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