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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR010PBF-BE3MOSFET N-CH 50V 8.2A DPAK Vishay Siliconix |
2,422 | 0.31 |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 8.2A (Tc) | - | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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IRFU310PBFMOSFET N-CH 400V 1.7A TO251AA Vishay Siliconix |
5,537 | 0.31 |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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SUD50P04-08-BE3MOSFET P-CH 40V 50A DPAK Vishay Siliconix |
9,400 | 0.31 |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 30A, 10V | 1V @ 250µA | 130 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SIR5708DP-T1-RE3N-CHANNEL 150 V (D-S) MOSFET POW Vishay Siliconix |
6,782 | 0.32 |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9.5A (Ta), 33.8A (Tc) | 7.5V, 10V | 23mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 975 pF @ 75 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFR310TRLPBFMOSFET N-CH 400V 1.7A DPAK Vishay Siliconix |
4,922 | 0.32 |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SIHP21N65EF-GE3MOSFET N-CH 650V 21A TO220AB Vishay Siliconix |
2,264 | 0.98 |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106 nC @ 10 V | ±20V | 2322 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SQJ886EP-T1_BE3N-CHANNEL 40-V (D-S) 175C MOSFET Vishay Siliconix |
2,553 | 0.33 |
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Datasheet |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 4.5mOhm @ 15.3A, 10V | 2.5V @ 250µA | 65 nC @ 10 V | ±20V | 2922 pF @ 20 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQD25N06-22L_T4GE3MOSFET N-CH 60V 25A TO252AA Vishay Siliconix |
3,974 | 0.33 |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 4.5V, 10V | 22mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 1975 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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SIHP25N60EFL-GE3MOSFET N-CH 600V 25A TO220AB Vishay Siliconix |
5,135 | 0.99 |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 2274 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF9Z10PBF-BE3MOSFET P-CH 60V 6.7A TO220AB Vishay Siliconix |
9,040 | 0.34 |
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Datasheet |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | - | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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