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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AC3M0015065KSIC MOSFET N-CH 650V 122A TO247- APSEMI |
10,000 | - |
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Datasheet |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 122A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | - | +19V, -8V | - | - | 416W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0015065DSIC MOSFET N-CH 650V 122A TO247- APSEMI |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 122A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | - | +19V, -8V | - | - | 416W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0016120KSIC MOSFET N-CH 1200V 117A TO247 APSEMI |
10,000 | - |
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Datasheet |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 117A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | - | +19V, -8V | - | - | 556W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0016120DSIC MOSFET N-CH 1200V 117A TO247 APSEMI |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 117A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | - | +19V, -8V | - | - | 556W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC2M0045170KSIC MOSFET N-CH 1700V 74A TO247- APSEMI |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 74A | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | - | +25V, -10V | - | - | 520W | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC2M0045170DSIC MOSFET N-CH 1700V 74A TO247- APSEMI |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 74A | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | - | +25V, -10V | - | - | 520W | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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