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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S2M0120120DMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
264 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 150mOhm @ 13.3A, 20V | 4V @ 3.3mA | 29.6 nC @ 20 V | +20V, -5V | 652 pF @ 1000 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S2M0120120KMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
295 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 150mOhm @ 13.3A, 20V | 4V @ 3.3mA | 29.6 nC @ 20 V | +20V, -5V | 652 pF @ 1000 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S2M0160120JMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 16A (Tc) | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | 26.5 nC @ 20 V | +20V, -5V | 513 pF @ 1000 V | - | 122W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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S2M0120120JMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
327 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 150mOhm @ 13.3A, 20V | 4V @ 3.3mA | 29.6 nC @ 20 V | +20V, -5V | 652 pF @ 1000 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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S2M0080120JMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
230 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tj) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +20V, -5V | 1324 pF @ 1000 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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S2M0040120D-1MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
299 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S3M0040120DMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S2M0040120K-1MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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|
S3M0040120KMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +22V, -8V | 2844 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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|
S3M0040120JMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 76A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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