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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GP2T080A120HSIC MOSFET 1200V 80M TO-247-4L SemiQ |
132 | 9.30 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 61 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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GP2T080A120USIC MOSFET 1200V 80M TO-247-3L SemiQ |
1,149 | 9.95 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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GCMX040B120S1-E1SIC 1200V 40M MOSFET SOT-227 SemiQ |
100 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 121 nC @ 20 V | +25V, -10V | 3185 pF @ 1000 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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GCMX020B120S1-E1SIC 1200V 20M MOSFET SOT-227 SemiQ |
4,394 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 28mOhm @ 50A, 20V | 4V @ 20mA | 216 nC @ 20 V | +25V, -10V | 5349 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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GP2T040A120HSIC MOSFET 1200V 40M TO-247-4L SemiQ |
2,439 | 17.83 |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | 322W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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GCMX080B120S1-E1SIC 1200V 80M MOSFET SOT-227 SemiQ |
1,335 | 18.66 |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1336 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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GCMS080B120S1-E1SIC 1200V 80M MOSFET & 10A SBD S SemiQ |
3,348 | 20.77 |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1374 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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GP2T040A120USIC MOSFET 1200V 40M TO-247-3L SemiQ |
2,024 | 17.46 |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | 322W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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GCMS040B120S1-E1SIC 1200V 40M MOSFET & 15A SBD S SemiQ |
3,323 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 124 nC @ 20 V | +25V, -10V | 3110 pF @ 1000 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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