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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6AM13N-CHANNEL AND P-CHANNEL, MOSFETS Renesas Electronics Corporation |
1,673 | 2.22 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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4AM14P-CHANNEL POWER MOSFET Renesas Electronics Corporation |
202 | 2.29 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK1628-EN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
3,302 | 2.32 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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H5N3011P80-E#T2N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
4,770 | 2.52 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SK1968-EN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
181 | 2.69 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK60S5DPN-00#T2N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
138,686 | 2.96 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK60S5DPK-M0#T0MOSFET N-CH 600V 20A TO3PSG Renesas Electronics Corporation |
68,097 | 2.96 |
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Datasheet |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | - | - | - | - | Through Hole | TO-3PSG |
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RJK60S5DPE-00#J3MOSFET N-CH 600V 20A 4LDPAK Renesas Electronics Corporation |
40,000 | 2.96 |
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Datasheet |
- | SC-83 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | 125W (Tc) | 150°C (TJ) | - | - | Surface Mount | LDPAK |
|
RJK60S5DPP-E0#T2MOSFET N-CH 600V 20A TO220FP Renesas Electronics Corporation |
226 | 2.96 |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | 33.7W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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4AM17-91POWER N AND P CHANNEL MOSFETS Renesas Electronics Corporation |
38,812 | 3.18 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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