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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UPA2815T1S-E2-ATMOSFET P-CH 30V 21A 8HWSON Renesas Electronics Corporation |
10,000 | 0.10 |
|
Datasheet |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Tc) | 4.5V, 10V | 11mOhm @ 21A, 10V | - | 47 nC @ 10 V | ±20V | 1760 pF @ 10 V | - | 1.5W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HWSON (3.3x3.3) |
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RJK03P8DPA-00#J5AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
675,000 | 0.27 |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK0390DPA-02#J5AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
339,000 | 0.27 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK0390DPA-00#J53MOSFET N-CH 30V 65A 8WPAK Renesas Electronics Corporation |
60,000 | 0.27 |
|
Datasheet |
- | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Ta) | - | 2.2mOhm @ 32.5A, 10V | - | 54 nC @ 4.5 V | - | 8900 pF @ 10 V | - | 60W (Tc) | - | - | - | Surface Mount | 8-WPAK |
|
UPA2780GR-E1-AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
19,848 | 0.27 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0328DPB-00#J0MOSFET N-CH 30V 60A LFPAK Renesas Electronics Corporation |
11,589 | 0.27 |
|
Datasheet |
- | SC-100, SOT-669 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Ta) | - | 2.1mOhm @ 30A, 10V | - | 42 nC @ 4.5 V | - | 6380 pF @ 10 V | - | - | - | - | - | Surface Mount | LFPAK |
|
RJJ0621DPP-00#T2P-CHANNEL POWER MOSFET Renesas Electronics Corporation |
10,416 | 0.27 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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UPA2816T1S-E2-ATMOSFET P-CH 30V 17A 8HWSON Renesas Electronics Corporation |
10,000 | 0.10 |
|
Datasheet |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Tc) | 4.5V, 10V | 15.5mOhm @ 17A, 10V | - | 33.4 nC @ 10 V | +20V, -25V | 1160 pF @ 10 V | - | 1.5W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HWSON (3.3x3.3) |
|
2SK2932-EN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
9,378 | 0.27 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK0379DPA-00#J53N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
9,000 | 0.27 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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