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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NP32N055SDE-E1-AZNP32N055SDE-E1-AZ - MOS FIELD EF Renesas |
3,719 | 0.20 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 32A (Tc) | 4.5V, 10V | 24mOhm @ 16A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 1.2W (Ta), 66W (Tc) | 175°C | - | - | Surface Mount | TO-252 (MP-3ZK) |
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UPA2714GR-E1-AP-CHANNEL SWITCHING POWER MOSFET Renesas Electronics Corporation |
5,000 | 0.20 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK0213DPA-00#J53N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
108,000 | 0.20 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK03E1DNS-00#J5POWER FIELD-EFFECT TRANSISTOR Renesas Electronics Corporation |
79,482 | 0.20 |
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Datasheet |
- | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta) | - | 6.9mOhm @ 12.5A, 10V | - | 10.7 nC @ 4.5 V | - | 2300 pF @ 10 V | - | 15W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HWSON (3.3x3.3) |
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UPA2810T1L-E2-AYMOSFET P-CH 30V 13A 8DFN Renesas Electronics Corporation |
75,000 | 0.20 |
|
Datasheet |
- | 8-VDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | - | 12mOhm @ 13A, 10V | 2.5V @ 1mA | 40 nC @ 10 V | - | 1860 pF @ 10 V | - | 1.5W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-DFN3333 (3.3x3.3) |
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UPA2806T1L-E1-AYN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
33,000 | 0.20 |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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UPA2810T1L-E1-AYMOSFET P-CH 30V 13A 8DFN Renesas Electronics Corporation |
3,000 | 0.20 |
|
Datasheet |
- | 8-VDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | - | 12mOhm @ 13A, 10V | 2.5V @ 1mA | 40 nC @ 10 V | - | 1860 pF @ 10 V | - | 1.5W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-DFN3333 (3.3x3.3) |
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RJJ0315DPA-00#J5AMOSFET P-CH 30V 35A Renesas Electronics Corporation |
2,850 | 0.20 |
|
Datasheet |
- | 8-WDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta) | - | 5.9mOhm @ 17.5A, 10V | 2.5V @ 1mA | 48 nC @ 4.5 V | - | 4300 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | - |
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2SK1060-AZN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,526 | 0.20 |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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UPA2720GR-E1-AMOSFET N-CH 30V 14A 8PSOP Renesas Electronics Corporation |
2,500 | 0.21 |
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Datasheet |
- | 8-SOIC (0.173", 4.40mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | - | 6.6mOhm @ 7A, 10V | 2.5V @ 1mA | 27 nC @ 5 V | - | 2800 pF @ 10 V | - | - | - | - | - | Surface Mount | 8-PSOP |
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