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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SICW100N065H-BPSIC MOSFET,TO-247AB Micro Commercial Co |
6,034 | - |
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- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 32A (Tc) | 20V | 130mOhm @ 12A, 20V | 4.5V @ 10mA | 66 nC @ 20 V | +25V, -10V | 910 pF @ 400 V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW100N065H4-BPSIC MOSFET,TO-247-4 Micro Commercial Co |
7,312 | - |
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Datasheet |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 32A (Tc) | 20V | 130mOhm @ 12A, 20V | 4.5V @ 10mA | 66 nC @ 20 V | +20V, -5V | 910 pF @ 400 V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MSJU11N65-TPMOSFET N-CH 650V 11A DPAK Micro Commercial Co |
8,973 | 0.30 |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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MCAC45N10Y-TPMOSFET N-CH 100 45A DFN5060 Micro Commercial Co |
4,084 | 0.48 |
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Datasheet |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Tj) | 4.5V, 10V | 8.5mOhm @ 25A, 10V | 3V @ 250µA | 45 nC @ 10 V | ±20V | 2240 pF @ 50 V | - | 75W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN5060 |
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MCW220N10Y-BPMOSFET Micro Commercial Co |
4,283 | - |
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Datasheet |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 220A (Tc) | 10V | 2.4mOhm @ 30A, 10V | 4V @ 250µA | 166 nC @ 10 V | ±20V | 10051 pF @ 50 V | - | 375W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MCW200N10YA-BPMOSFET Micro Commercial Co |
5,201 | - |
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Datasheet |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 2.7mOhm @ 30A, 10V | 4V @ 250µA | 166 nC @ 10 V | ±20V | 10051 pF @ 50 V | - | 375W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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SICW280N120A-BPMOSFET N-CH 1200V 10A TO247AB Micro Commercial Co |
5,936 | - |
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Datasheet |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 16V, 20V | 330mOhm @ 5A, 20V | 3V @ 1mA | 26 nC @ 18 V | +22V, -5V | 357 pF @ 1000 V | - | 97W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW080N120H-BPSIC MOSFET,TO-247AB Micro Commercial Co |
2,666 | - |
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- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 20V | 110mOhm @ 15A, 20V | 4.5V @ 20mA | 131 nC @ 20 V | +25V, -10V | 2644 pF @ 800 V | - | 224W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW060N065H-BPSIC MOSFETS,TO-247AB Micro Commercial Co |
3,764 | - |
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Datasheet |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 60A (Tc) | 18V | 75mOhm @ 20A, 18V | 4.5V @ 20mA | 121 nC @ 18 V | +22V, -10V | 1850 pF @ 400 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW050N065H-BPSIC MOSFET,TO-247AB Micro Commercial Co |
8,650 | - |
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- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 60A (Tc) | 20V | 65mOhm @ 20A, 20V | 4.5V @ 20mA | 121 nC @ 20 V | +25V, -10V | 1850 pF @ 400 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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