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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G70N04TN40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
2,875 | 0.20 |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | 2.4V @ 250µA | 50 nC @ 10 V | ±20V | 2169 pF @ 20 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT130N10FMOSFET N-CH 100V 45A TO-220F Goford Semiconductor |
1,970 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1215 pF @ 50 V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G230P06TP-60V,-60A,RD(MAX)<20M@-10V,VTH- Goford Semiconductor |
4,442 | - |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 20mOhm @ 10A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4499 pF @ 30 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G230P06FMOSFET P-CH 60V 42A TO-220F Goford Semiconductor |
1,004 | - |
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Datasheet |
TrenchFET® | TO-220-3 Full Pack | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Tc) | 4.5V, 10V | 23mOhm @ -10A,- 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4669 pF @ 30 V | - | 67.57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT750P10KP-CH,-100V,-24A,RD(MAX)<85M@-10V Goford Semiconductor |
2,708 | - |
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Datasheet |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 10V | 75mOhm @ 20A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 1940 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT180N12MMOSFET N-CH 120V 55A 96W TO-263 Goford Semiconductor |
800 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 55A (Tc) | 10V | 17mOhm @ 20A, 10V | 3.7V @ 250µA | 22 nC @ 10 V | ±20V | 1635 pF @ 60 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G20P08KP-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Goford Semiconductor |
3,539 | 0.18 |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 20A (Tc) | 4.5V, 10V | 62mOhm @ 10A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 3500 pF @ 30 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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630ATN200V,RD(MAX)<250M@10V,RD(MAX)<3 Goford Semiconductor |
2,480 | 0.19 |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4.5V, 10V | 250mOhm @ 1A, 10V | 2.2V @ 250µA | 11.8 nC @ 10 V | ±20V | 509 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G65P06FP-CH, -60V, 65A, RD(MAX)<18M@-10 Goford Semiconductor |
2,385 | 0.32 |
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Datasheet |
TrenchFET® | TO-220-3 Full Pack | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 6477 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT105N10MMOSFET N-CH 100V 60A 83W TO-263 Goford Semiconductor |
800 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 11mOhm @ 20A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±20V | 1675 pF @ 50 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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